| Anzahl | Preis |
|---|---|
| 1+ | 8.68 EUR |
| 10+ | 7.29 EUR |
| 25+ | 7.08 EUR |
| 100+ | 5.9 EUR |
| 250+ | 5.72 EUR |
| 500+ | 5.24 EUR |
| 1000+ | 4.82 EUR |
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Technische Details NTMFS5H414NLT1G onsemi
Description: MOSFET N-CH 40V 35A/210A 5DFN, Input Capacitance (Ciss) (Max) @ Vds: 4550 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 3.1W (Ta), 110W (Tc), Rds On (Max) @ Id, Vgs: 1.4mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 210A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, 5 Leads, Packaging: Tape & Reel (TR).
Weitere Produktangebote NTMFS5H414NLT1G nach Preis ab 5.33 EUR bis 8.84 EUR
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NTMFS5H414NLT1G | onsemi |
 Description: MOSFET N-CH 40V 35A/210A 5DFNInput Capacitance (Ciss) (Max) @ Vds: 4550 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 3.1W (Ta), 110W (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 210A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Cut Tape (CT) |
auf Bestellung 1410 Stücke: Lieferzeit 10-14 Tag (e) |
|
| NTMFS5H414NLT1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 40V 35A/210A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 4550 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 110W (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 210A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 35A/210A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 4550 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 110W (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 210A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
auf Bestellung 1410 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 8.84 EUR |
| 10+ | 7.41 EUR |
| 100+ | 6 EUR |
| 500+ | 5.33 EUR |