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NTMFS5H615NLT1G

NTMFS5H615NLT1G onsemi

ntmfs5h615nl-d.pdf
Hersteller: onsemi
Description: MOSFET N-CH 60V 28A/185A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 4860 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 139W (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 49A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 185A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+1.64 EUR
3000+1.63 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NTMFS5H615NLT1G onsemi

Description: MOSFET N-CH 60V 28A/185A 5DFN, Input Capacitance (Ciss) (Max) @ Vds: 4860 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 3.2W (Ta), 139W (Tc), Rds On (Max) @ Id, Vgs: 1.8mOhm @ 49A, 10V, Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 185A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, 5 Leads, Packaging: Tape & Reel (TR).

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NTMFS5H615NLT1G NTMFS5H615NLT1G Hersteller : onsemi ntmfs5h615nl-d.pdf MOSFETs T8 60V LOW COSS
auf Bestellung 1458 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.19 EUR
10+3.22 EUR
100+2.31 EUR
500+1.95 EUR
1000+1.65 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NTMFS5H615NLT1G NTMFS5H615NLT1G Hersteller : onsemi ntmfs5h615nl-d.pdf Description: MOSFET N-CH 60V 28A/185A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 4860 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 139W (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 49A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 185A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
auf Bestellung 5729 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.93 EUR
10+3.26 EUR
100+2.27 EUR
500+1.85 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
NTMFS5H615NLT1G Hersteller : ON Semiconductor ntmfs5h615nl-d.pdf
auf Bestellung 1365 Stücke:
Lieferzeit 21-28 Tag (e)
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