| Anzahl | Preis |
|---|---|
| 2+ | 2.01 EUR |
| 10+ | 1.49 EUR |
| 25+ | 1.48 EUR |
| 100+ | 1.18 EUR |
| 500+ | 1.05 EUR |
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Technische Details NTMFS6D1N08HT1G onsemi
Description: MOSFET N-CH 80V 17A/89A 5DFN, Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Vgs(th) (Max) @ Id: 4V @ 120µA, Power Dissipation (Max): 3.8W (Ta), 104W (Tc), Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 89A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, 5 Leads, Packaging: Tape & Reel (TR).
Weitere Produktangebote NTMFS6D1N08HT1G nach Preis ab 1.41 EUR bis 3.26 EUR
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NTMFS6D1N08HT1G | onsemi |
 Description: MOSFET N-CH 80V 17A/89A 5DFNInput Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 4V @ 120µA Power Dissipation (Max): 3.8W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 89A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Cut Tape (CT) |
auf Bestellung 492 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTMFS6D1N08HT1G | ON Semiconductor |
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auf Bestellung 880 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NTMFS6D1N08HT1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 80V 17A/89A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 4V @ 120µA
Power Dissipation (Max): 3.8W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 89A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 80V 17A/89A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 4V @ 120µA
Power Dissipation (Max): 3.8W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 89A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
auf Bestellung 492 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 3.26 EUR |
| 10+ | 2.08 EUR |
| 100+ | 1.41 EUR |
| NTMFS6D1N08HT1G |
|
Hersteller: ON Semiconductor
auf Bestellung 880 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH