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NTMFSC011N08M7

NTMFSC011N08M7 onsemi

ntmfsc011n08m7-d.pdf Hersteller: onsemi
Description: MV7 80V SG 10MOHM PQFN56DC
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 61A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V
Power Dissipation (Max): 3.3W (Ta), 78.1W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 120µA
Supplier Device Package: 8-DFN (5x6.15)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 40 V
auf Bestellung 15531000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.90 EUR
6000+0.89 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NTMFSC011N08M7 onsemi

Description: MV7 80V SG 10MOHM PQFN56DC, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 61A (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V, Power Dissipation (Max): 3.3W (Ta), 78.1W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 120µA, Supplier Device Package: 8-DFN (5x6.15), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 40 V.

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NTMFSC011N08M7 NTMFSC011N08M7 Hersteller : onsemi ntmfsc011n08m7-d.pdf Description: MV7 80V SG 10MOHM PQFN56DC
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 61A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V
Power Dissipation (Max): 3.3W (Ta), 78.1W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 120µA
Supplier Device Package: 8-DFN (5x6.15)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 40 V
auf Bestellung 15533990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.31 EUR
10+2.12 EUR
100+1.43 EUR
500+1.14 EUR
1000+1.09 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
NTMFSC011N08M7 Hersteller : ON Semiconductor ntmfsc011n08m7-d.pdf N-Channel Dual Power Trench MOSFET
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NTMFSC011N08M7 Hersteller : ONSEMI ntmfsc011n08m7-d.pdf NTMFSC011N08M7 Multi channel transistors
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NTMFSC011N08M7 Hersteller : onsemi ntmfsc011n08m7-d.pdf MOSFETs MV7 80V SG 10MOHM PQFN56DC
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