| Anzahl | Preis |
|---|---|
| 1+ | 5.4 EUR |
| 10+ | 3.52 EUR |
| 100+ | 2.5 EUR |
| 500+ | 2.06 EUR |
| 1000+ | 1.97 EUR |
| 3000+ | 1.85 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NTMFSC1D9N08XTWG onsemi
Description: MOSFET POWERTRENCH T10, SINGLE,, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 201A (Tc), Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V, Power Dissipation (Max): 164W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 252µA, Supplier Device Package: 8-DFN (5x6.15), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4470 pF @ 40 V.
Weitere Produktangebote NTMFSC1D9N08XTWG nach Preis ab 1.97 EUR bis 5.4 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
NTMFSC1D9N08XTWG | Hersteller : onsemi |
 Description: MOSFET POWERTRENCH T10, SINGLE,Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 201A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V Power Dissipation (Max): 164W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 252µA Supplier Device Package: 8-DFN (5x6.15) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4470 pF @ 40 V |
auf Bestellung 4981 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
|
NTMFSC1D9N08XTWG | Hersteller : onsemi |
Description: MOSFET POWERTRENCH T10, SINGLE, Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 201A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V Power Dissipation (Max): 164W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 252µA Supplier Device Package: 8-DFN (5x6.15) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4470 pF @ 40 V |
auf Bestellung 2845 Stücke: Lieferzeit 10-14 Tag (e) |