NTMFWS1D5N08XT1G onsemi
Hersteller: onsemi
Description: MOSFET - POWER, SINGLE, N-CHANNE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 253A (Tc)
Rds On (Max) @ Id, Vgs: 1.43mOhm @ 50A, 10V
Power Dissipation (Max): 194W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 330µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5880 pF @ 40 V
| Anzahl | Preis |
|---|---|
| 1500+ | 1.79 EUR |
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Technische Details NTMFWS1D5N08XT1G onsemi
Description: MOSFET - POWER, SINGLE, N-CHANNE, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 253A (Tc), Rds On (Max) @ Id, Vgs: 1.43mOhm @ 50A, 10V, Power Dissipation (Max): 194W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 330µA, Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5880 pF @ 40 V.
Weitere Produktangebote NTMFWS1D5N08XT1G nach Preis ab 2.16 EUR bis 5.39 EUR
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NTMFWS1D5N08XT1G | onsemi |
MOSFETs MOSFET - Power, Single, N-Channel, STD Gate. SO8FL-HEFET, 80V, 1.43mohm, 253 A MOSFET - Power, Single, N-Channel, STD Gate. SO8FL-HEFET, 80V, 1.43mohm, 253 A |
auf Bestellung 386 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMFWS1D5N08XT1G | onsemi |
Description: MOSFET - POWER, SINGLE, N-CHANNE Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 253A (Tc) Rds On (Max) @ Id, Vgs: 1.43mOhm @ 50A, 10V Power Dissipation (Max): 194W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 330µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5880 pF @ 40 V |
auf Bestellung 2961 Stücke: Lieferzeit 10-14 Tag (e) |
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Hersteller: onsemi
MOSFETs MOSFET - Power, Single, N-Channel, STD Gate. SO8FL-HEFET, 80V, 1.43mohm, 253 A MOSFET - Power, Single, N-Channel, STD Gate. SO8FL-HEFET, 80V, 1.43mohm, 253 A
MOSFETs MOSFET - Power, Single, N-Channel, STD Gate. SO8FL-HEFET, 80V, 1.43mohm, 253 A MOSFET - Power, Single, N-Channel, STD Gate. SO8FL-HEFET, 80V, 1.43mohm, 253 A
auf Bestellung 386 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 5.3 EUR |
| 10+ | 3.98 EUR |
| 25+ | 3.85 EUR |
| 100+ | 3.13 EUR |
| 250+ | 2.94 EUR |
| 500+ | 2.36 EUR |
| 1500+ | 2.24 EUR |
| NTMFWS1D5N08XT1G |
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Hersteller: onsemi
Description: MOSFET - POWER, SINGLE, N-CHANNE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 253A (Tc)
Rds On (Max) @ Id, Vgs: 1.43mOhm @ 50A, 10V
Power Dissipation (Max): 194W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 330µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5880 pF @ 40 V
Description: MOSFET - POWER, SINGLE, N-CHANNE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 253A (Tc)
Rds On (Max) @ Id, Vgs: 1.43mOhm @ 50A, 10V
Power Dissipation (Max): 194W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 330µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5880 pF @ 40 V
auf Bestellung 2961 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 5.39 EUR |
| 10+ | 3.53 EUR |
| 100+ | 2.47 EUR |
| 500+ | 2.16 EUR |