
NTMJS1D2N04CLTWG onsemi

Description: MOSFET N-CH 40V 41A/237A 8LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 237A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 128W (Tc)
Vgs(th) (Max) @ Id: 2V @ 170µA
Supplier Device Package: 8-LFPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
3000+ | 1.19 EUR |
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Technische Details NTMJS1D2N04CLTWG onsemi
Description: MOSFET N-CH 40V 41A/237A 8LFPAK, Packaging: Tape & Reel (TR), Package / Case: SOT-1205, 8-LFPAK56, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 237A (Tc), Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V, Power Dissipation (Max): 3.8W (Ta), 128W (Tc), Vgs(th) (Max) @ Id: 2V @ 170µA, Supplier Device Package: 8-LFPAK, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V.
Weitere Produktangebote NTMJS1D2N04CLTWG nach Preis ab 1.46 EUR bis 4.05 EUR
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NTMJS1D2N04CLTWG | Hersteller : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 237A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 128W (Tc) Vgs(th) (Max) @ Id: 2V @ 170µA Supplier Device Package: 8-LFPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMJS1D2N04CLTWG | Hersteller : ON Semiconductor |
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NTMJS1D2N04CLTWG | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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NTMJS1D2N04CLTWG | Hersteller : onsemi |
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Produkt ist nicht verfügbar |