NTMKE4891NT1G onsemi
Hersteller: onsemi
Description: MOSFET N-CH 25V 26.7A 4ICEPAK
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 4-ICEPAK - E1 PAD (6.3x4.9)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 29A, 10V
Current - Continuous Drain (Id) @ 25°C: 26.7A (Ta), 151A (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-ICEPAK
Packaging: Tape & Reel (TR)
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Technische Details NTMKE4891NT1G onsemi
Description: MOSFET N-CH 25V 26.7A 4ICEPAK, FET Type: N-Channel, Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V, Drain to Source Voltage (Vdss): 25 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: 4-ICEPAK - E1 PAD (6.3x4.9), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Power Dissipation (Max): 2.8W (Ta), 89W (Tc), Rds On (Max) @ Id, Vgs: 2.6mOhm @ 29A, 10V, Current - Continuous Drain (Id) @ 25°C: 26.7A (Ta), 151A (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 5-ICEPAK, Packaging: Tape & Reel (TR).