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NTMS10P02R2G

NTMS10P02R2G onsemi

ntms10p02r2-d.pdf
Hersteller: onsemi
Description: MOSFET P-CH 20V 8.8A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 3640 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 32500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.17 EUR
5000+1.13 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NTMS10P02R2G onsemi

Description: MOSFET P-CH 20V 8.8A 8SOIC, Input Capacitance (Ciss) (Max) @ Vds: 3640 pF @ 16 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Power Dissipation (Max): 1.6W (Ta), Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).

Weitere Produktangebote NTMS10P02R2G nach Preis ab 0.95 EUR bis 3.75 EUR

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NTMS10P02R2G NTMS10P02R2G Hersteller : onsemi ntms10p02r2-d.pdf MOSFETs 20V 10A P-Channel
auf Bestellung 1284 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.36 EUR
10+2.15 EUR
100+1.45 EUR
500+1.15 EUR
1000+1.06 EUR
2500+0.95 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NTMS10P02R2G NTMS10P02R2G Hersteller : onsemi ntms10p02r2-d.pdf Description: MOSFET P-CH 20V 8.8A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 3640 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 33448 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.75 EUR
10+2.36 EUR
100+1.76 EUR
500+1.41 EUR
1000+1.29 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
NTMS10P02R2G Hersteller : ONN ntms10p02r2-d.pdf
auf Bestellung 3644 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH