NTMS5835NLR2G onsemi
Hersteller: onsemi
Description: MOSFET N-CH 40V 9.2A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 2115 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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Technische Details NTMS5835NLR2G onsemi
Description: MOSFET N-CH 40V 9.2A 8SOIC, Input Capacitance (Ciss) (Max) @ Vds: 2115 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 1.5W (Ta), Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote NTMS5835NLR2G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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NTMS5835NLR2G | onsemi |
Description: MOSFET N-CH 40V 9.2A 8SOIC Input Capacitance (Ciss) (Max) @ Vds: 2115 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NTMS5835NLR2G |
|
Hersteller: onsemi
Description: MOSFET N-CH 40V 9.2A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 2115 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 9.2A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 2115 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH