auf Bestellung 838 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 22+ | 2.39 EUR |
| 25+ | 2.11 EUR |
| 100+ | 1.62 EUR |
| 500+ | 1.28 EUR |
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Technische Details NTMS5P02R2G onsemi
Description: MOSFET P-CH 20V 3.95A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.95A (Ta), Rds On (Max) @ Id, Vgs: 33mOhm @ 5.4A, 4.5V, Power Dissipation (Max): 790mW (Ta), Vgs(th) (Max) @ Id: 1.25V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 16 V.
Weitere Produktangebote NTMS5P02R2G nach Preis ab 1.1 EUR bis 2.42 EUR
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NTMS5P02R2G | Hersteller : onsemi |
 Description: MOSFET P-CH 20V 3.95A 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.95A (Ta) Rds On (Max) @ Id, Vgs: 33mOhm @ 5.4A, 4.5V Power Dissipation (Max): 790mW (Ta) Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 16 V |
auf Bestellung 2422 Stücke: Lieferzeit 21-28 Tag (e) |
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| NTMS5P02R2G | Hersteller : ON |
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auf Bestellung 96 Stücke: Lieferzeit 21-28 Tag (e) |
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| NTMS5P02R2G | Hersteller : ON |
05+ SOP |
auf Bestellung 50 Stücke: Lieferzeit 21-28 Tag (e) |
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NTMS5P02R2G | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 20V 7.05A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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NTMS5P02R2G | Hersteller : onsemi |
Description: MOSFET P-CH 20V 3.95A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.95A (Ta) Rds On (Max) @ Id, Vgs: 33mOhm @ 5.4A, 4.5V Power Dissipation (Max): 790mW (Ta) Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 16 V |
Produkt ist nicht verfügbar |