| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.76 EUR |
| 10+ | 1.3 EUR |
| 100+ | 1.17 EUR |
| 500+ | 0.9 EUR |
| 2500+ | 0.74 EUR |
| 5000+ | 0.69 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
2 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details NTMS5P02R2G onsemi
Description: MOSFET P-CH 20V 3.95A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.95A (Ta), Rds On (Max) @ Id, Vgs: 33mOhm @ 5.4A, 4.5V, Power Dissipation (Max): 790mW (Ta), Vgs(th) (Max) @ Id: 1.25V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 16 V.
Weitere Produktangebote NTMS5P02R2G nach Preis ab 0.9 EUR bis 2.76 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
NTMS5P02R2G | onsemi |
 Description: MOSFET P-CH 20V 3.95A 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.95A (Ta) Rds On (Max) @ Id, Vgs: 33mOhm @ 5.4A, 4.5V Power Dissipation (Max): 790mW (Ta) Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 16 V |
auf Bestellung 2499 Stücke: Lieferzeit 10-14 Tag (e) |
|
| NTMS5P02R2G |
|
Hersteller: onsemi
Description: MOSFET P-CH 20V 3.95A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.95A (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 5.4A, 4.5V
Power Dissipation (Max): 790mW (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 16 V
Description: MOSFET P-CH 20V 3.95A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.95A (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 5.4A, 4.5V
Power Dissipation (Max): 790mW (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 16 V
auf Bestellung 2499 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.76 EUR |
| 13+ | 1.74 EUR |
| 50+ | 1.3 EUR |
| 100+ | 1.15 EUR |
| 500+ | 0.9 EUR |