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NTMT045N065SC1

NTMT045N065SC1 onsemi

ntmt045n065sc1-d.pdf
Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET - 3
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 8mA
Supplier Device Package: 4-TDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 325 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+9.23 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NTMT045N065SC1 onsemi

Description: SILICON CARBIDE (SIC) MOSFET - 3, Packaging: Tape & Reel (TR), Package / Case: 4-PowerTSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 55A (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V, Power Dissipation (Max): 187W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 8mA, Supplier Device Package: 4-TDFN (8x8), Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +22V, -8V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 325 V.

Weitere Produktangebote NTMT045N065SC1 nach Preis ab 10.75 EUR bis 19.08 EUR

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NTMT045N065SC1 NTMT045N065SC1 onsemi ntmt045n065sc1-d.pdf Description: SILICON CARBIDE (SIC) MOSFET - 3
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 8mA
Supplier Device Package: 4-TDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 325 V
auf Bestellung 6596 Stücke:
Lieferzeit 10-14 Tag (e)
1+18.71 EUR
10+13.04 EUR
100+11.3 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NTMT045N065SC1 NTMT045N065SC1 onsemi ntmt045n065sc1-d.pdf SiC MOSFETs SIC MOS PQFN88 650V
auf Bestellung 5819 Stücke:
Lieferzeit 10-14 Tag (e)
1+19.08 EUR
10+13.8 EUR
100+11.46 EUR
1000+10.75 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NTMT045N065SC1 ntmt045n065sc1-d.pdf
NTMT045N065SC1
Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET - 3
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 8mA
Supplier Device Package: 4-TDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 325 V
auf Bestellung 6596 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+18.71 EUR
10+13.04 EUR
100+11.3 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NTMT045N065SC1 ntmt045n065sc1-d.pdf
NTMT045N065SC1
Hersteller: onsemi
SiC MOSFETs SIC MOS PQFN88 650V
auf Bestellung 5819 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+19.08 EUR
10+13.8 EUR
100+11.46 EUR
1000+10.75 EUR
Im Einkaufswagen  Stück im Wert von  UAH