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NTMT090N65S3HF onsemi


ntmt090n65s3hf-d.pdf
Hersteller: onsemi
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 18A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 5V @ 860µA
Supplier Device Package: 4-PQFN (8x8)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2930 pF @ 400 V
auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+6.13 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details NTMT090N65S3HF onsemi

Description: POWER MOSFET, N-CHANNEL, SUPERFE, Packaging: Tape & Reel (TR), Package / Case: 4-PowerTSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 36A (Tc), Rds On (Max) @ Id, Vgs: 90mOhm @ 18A, 10V, Power Dissipation (Max): 272W (Tc), Vgs(th) (Max) @ Id: 5V @ 860µA, Supplier Device Package: 4-PQFN (8x8), Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2930 pF @ 400 V.

Weitere Produktangebote NTMT090N65S3HF nach Preis ab 7.5 EUR bis 15.4 EUR

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NTMT090N65S3HF NTMT090N65S3HF onsemi ntmt090n65s3hf-d.pdf Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 18A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 5V @ 860µA
Supplier Device Package: 4-PQFN (8x8)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2930 pF @ 400 V
auf Bestellung 3010 Stücke:
Lieferzeit 10-14 Tag (e)
2+13.69 EUR
10+9.37 EUR
100+7.5 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NTMT090N65S3HF NTMT090N65S3HF onsemi ntmt090n65s3hf-d.pdf MOSFETs SF3 FRFET 650V 90MOHM PQFN88
auf Bestellung 2998 Stücke:
Lieferzeit 10-14 Tag (e)
1+15.4 EUR
10+10.58 EUR
100+7.99 EUR
1000+7.52 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NTMT090N65S3HF ntmt090n65s3hf-d.pdf
Hersteller: onsemi
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 18A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 5V @ 860µA
Supplier Device Package: 4-PQFN (8x8)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2930 pF @ 400 V
auf Bestellung 3010 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+13.69 EUR
10+9.37 EUR
100+7.5 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NTMT090N65S3HF ntmt090n65s3hf-d.pdf
Hersteller: onsemi
MOSFETs SF3 FRFET 650V 90MOHM PQFN88
auf Bestellung 2998 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+15.4 EUR
10+10.58 EUR
100+7.99 EUR
1000+7.52 EUR
Im Einkaufswagen  Stück im Wert von  UAH