NTMT095N65S3H onsemi
Hersteller: onsemi
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.8mA
Supplier Device Package: 4-TDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2833 pF @ 400 V
Produktrezensionen
Produktbewertung abgeben
Technische Details NTMT095N65S3H onsemi
Description: POWER MOSFET, N-CHANNEL, SUPERFE, Packaging: Tape & Reel (TR), Package / Case: 4-PowerTSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V, Power Dissipation (Max): 208W (Tc), Vgs(th) (Max) @ Id: 4V @ 2.8mA, Supplier Device Package: 4-TDFN (8x8), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2833 pF @ 400 V.
Weitere Produktangebote NTMT095N65S3H nach Preis ab 6.91 EUR bis 17.47 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NTMT095N65S3H | ON Semiconductor |
Trans MOSFET N-CH 650V 30A 4-Pin TDFN EP Reel |
auf Bestellung 3029 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
|
NTMT095N65S3H | ON Semiconductor |
Trans MOSFET N-CH 650V 30A 4-Pin TDFN EP Reel |
auf Bestellung 9798 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
|
|
NTMT095N65S3H | onsemi |
MOSFETs SF3 FAST 95MOHM PQFN88 |
auf Bestellung 2699 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
|
NTMT095N65S3H | onsemi |
Description: POWER MOSFET, N-CHANNEL, SUPERFEPackaging: Cut Tape (CT) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 4V @ 2.8mA Supplier Device Package: 4-TDFN (8x8) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2833 pF @ 400 V |
auf Bestellung 20841 Stücke: Lieferzeit 10-14 Tag (e) |
|
| NTMT095N65S3H |
![]() |
Hersteller: ON Semiconductor
Trans MOSFET N-CH 650V 30A 4-Pin TDFN EP Reel
Trans MOSFET N-CH 650V 30A 4-Pin TDFN EP Reel
auf Bestellung 3029 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 76+ | 8.6 EUR |
| 100+ | 8.06 EUR |
| 500+ | 7.46 EUR |
| 1000+ | 6.91 EUR |
| NTMT095N65S3H |
![]() |
Hersteller: ON Semiconductor
Trans MOSFET N-CH 650V 30A 4-Pin TDFN EP Reel
Trans MOSFET N-CH 650V 30A 4-Pin TDFN EP Reel
auf Bestellung 9798 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 76+ | 8.6 EUR |
| 100+ | 8.06 EUR |
| 500+ | 7.46 EUR |
| 1000+ | 6.91 EUR |
| NTMT095N65S3H |
![]() |
Hersteller: onsemi
MOSFETs SF3 FAST 95MOHM PQFN88
MOSFETs SF3 FAST 95MOHM PQFN88
auf Bestellung 2699 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 17.33 EUR |
| 10+ | 11.83 EUR |
| 100+ | 9.76 EUR |
| 500+ | 8.69 EUR |
| 3000+ | 8.13 EUR |
| NTMT095N65S3H |
![]() |
Hersteller: onsemi
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.8mA
Supplier Device Package: 4-TDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2833 pF @ 400 V
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.8mA
Supplier Device Package: 4-TDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2833 pF @ 400 V
auf Bestellung 20841 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 17.47 EUR |
| 10+ | 11.95 EUR |
| 100+ | 8.87 EUR |


