| Anzahl | Privatkunde |
|---|---|
| 1+ | 8.9 EUR |
| 10+ | 6.5 EUR |
| 100+ | 4.71 EUR |
| 500+ | 3.96 EUR |
| 3000+ | 3.94 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NTMT125N65S3H onsemi
Description: POWER MOSFET, N-CHANNEL, SUPERFE, Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: 4-TDFN (8x8), Vgs(th) (Max) @ Id: 4V @ 2.1mA, Power Dissipation (Max): 171W (Tc), Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 4-PowerTSFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote NTMT125N65S3H
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
NTMT125N65S3H | onsemi |
 Description: POWER MOSFET, N-CHANNEL, SUPERFEInput Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: 4-TDFN (8x8) Vgs(th) (Max) @ Id: 4V @ 2.1mA Power Dissipation (Max): 171W (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-PowerTSFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
NTMT125N65S3H | onsemi |
Description: POWER MOSFET, N-CHANNEL, SUPERFE Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: 4-TDFN (8x8) Power Dissipation (Max): 171W (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-PowerTSFN Packaging: Cut Tape (CT) Vgs(th) (Max) @ Id: 4V @ 2.1mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NTMT125N65S3H |
|
Hersteller: onsemi
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 4-TDFN (8x8)
Vgs(th) (Max) @ Id: 4V @ 2.1mA
Power Dissipation (Max): 171W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Tape & Reel (TR)
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 4-TDFN (8x8)
Vgs(th) (Max) @ Id: 4V @ 2.1mA
Power Dissipation (Max): 171W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NTMT125N65S3H |
|
Hersteller: onsemi
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 4-TDFN (8x8)
Power Dissipation (Max): 171W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 4V @ 2.1mA
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 4-TDFN (8x8)
Power Dissipation (Max): 171W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 4V @ 2.1mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH