NTMT125N65S3H onsemi

Description: POWER MOSFET, N-CHANNEL, SUPERFE, Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: 4-TDFN (8x8), Vgs(th) (Max) @ Id: 4V @ 2.1mA, Power Dissipation (Max): 171W (Tc), Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 4-PowerTSFN, Packaging: Tape & Reel (TR).