NTMT150N65S3HF ONSEMI
Hersteller: ONSEMI
Description: ONSEMI - NTMT150N65S3HF - Leistungs-MOSFET, n-Kanal, 650 V, 24 A, 0.121 ohm, PQFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 24A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Verlustleistung Pd: 192W
Gate-Source-Schwellenspannung, max.: 5V
euEccn: NLR
Verlustleistung: 192W
Bauform - Transistor: PQFN
Qualifizierungsstandard der Automobilindustrie: -
Anzahl der Pins: 4Pin(s)
Produktpalette: SUPERFET III FRFET
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.121ohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.121ohm
SVHC: Lead (27-Jun-2024)
| Anzahl | Privatkunde |
|---|---|
| 100+ | 5.62 EUR |
| 500+ | 5.31 EUR |
| 1000+ | 5.2 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NTMT150N65S3HF ONSEMI
Description: ONSEMI - NTMT150N65S3HF - Leistungs-MOSFET, n-Kanal, 650 V, 24 A, 0.121 ohm, PQFN, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 650V, rohsCompliant: Y-EX, Dauer-Drainstrom Id: 24A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Verlustleistung Pd: 192W, Gate-Source-Schwellenspannung, max.: 5V, euEccn: NLR, Verlustleistung: 192W, Bauform - Transistor: PQFN, Qualifizierungsstandard der Automobilindustrie: -, Anzahl der Pins: 4Pin(s), Produktpalette: SUPERFET III FRFET, productTraceability: Yes-Date/Lot Code, Wandlerpolarität: n-Kanal, Kanaltyp: n-Kanal, Betriebswiderstand, Rds(on): 0.121ohm, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 0.121ohm, SVHC: Lead (27-Jun-2024).
Weitere Produktangebote NTMT150N65S3HF nach Preis ab 5.2 EUR bis 14.96 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
NTMT150N65S3HF | onsemi |
Description: POWER MOSFET, N-CHANNEL, SUPERFE Packaging: Tape & Reel (TR) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V Power Dissipation (Max): 192W (Tc) Vgs(th) (Max) @ Id: 5V @ 540µA Supplier Device Package: 4-PQFN (8x8) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1985 pF @ 400 V |
auf Bestellung 21000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
|
|
NTMT150N65S3HF | ONSEMI |
Description: ONSEMI - NTMT150N65S3HF - Leistungs-MOSFET, n-Kanal, 650 V, 24 A, 0.121 ohm, PQFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: Y-EX Dauer-Drainstrom Id: 24A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5V euEccn: NLR Verlustleistung: 192W Bauform - Transistor: PQFN Anzahl der Pins: 4Pin(s) Produktpalette: SUPERFET III FRFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.121ohm SVHC: Lead (27-Jun-2024) |
auf Bestellung 2961 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
 |
NTMT150N65S3HF | onsemi |
MOSFETs SF3 FRFET 650V 150MOHM PQFN88 |
auf Bestellung 2729 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
|
|
NTMT150N65S3HF | onsemi |
Description: POWER MOSFET, N-CHANNEL, SUPERFE Packaging: Cut Tape (CT) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V Power Dissipation (Max): 192W (Tc) Vgs(th) (Max) @ Id: 5V @ 540µA Supplier Device Package: 4-PQFN (8x8) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1985 pF @ 400 V |
auf Bestellung 22620 Stücke: Lieferzeit 10-14 Tag (e) |
|
| NTMT150N65S3HF |
|
Hersteller: onsemi
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 5V @ 540µA
Supplier Device Package: 4-PQFN (8x8)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1985 pF @ 400 V
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 5V @ 540µA
Supplier Device Package: 4-PQFN (8x8)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1985 pF @ 400 V
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 5.9 EUR |
| NTMT150N65S3HF |
|
Hersteller: ONSEMI
Description: ONSEMI - NTMT150N65S3HF - Leistungs-MOSFET, n-Kanal, 650 V, 24 A, 0.121 ohm, PQFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 24A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 5V
euEccn: NLR
Verlustleistung: 192W
Bauform - Transistor: PQFN
Anzahl der Pins: 4Pin(s)
Produktpalette: SUPERFET III FRFET
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.121ohm
SVHC: Lead (27-Jun-2024)
Description: ONSEMI - NTMT150N65S3HF - Leistungs-MOSFET, n-Kanal, 650 V, 24 A, 0.121 ohm, PQFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 24A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 5V
euEccn: NLR
Verlustleistung: 192W
Bauform - Transistor: PQFN
Anzahl der Pins: 4Pin(s)
Produktpalette: SUPERFET III FRFET
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.121ohm
SVHC: Lead (27-Jun-2024)
auf Bestellung 2961 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 21+ | 12 EUR |
| 29+ | 8.08 EUR |
| 100+ | 5.62 EUR |
| 500+ | 5.31 EUR |
| 1000+ | 5.2 EUR |
| NTMT150N65S3HF |
|
Hersteller: onsemi
MOSFETs SF3 FRFET 650V 150MOHM PQFN88
MOSFETs SF3 FRFET 650V 150MOHM PQFN88
auf Bestellung 2729 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 14.79 EUR |
| 10+ | 10.41 EUR |
| 100+ | 8.43 EUR |
| 500+ | 7.5 EUR |
| 1000+ | 6.62 EUR |
| NTMT150N65S3HF |
|
Hersteller: onsemi
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 5V @ 540µA
Supplier Device Package: 4-PQFN (8x8)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1985 pF @ 400 V
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 5V @ 540µA
Supplier Device Package: 4-PQFN (8x8)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1985 pF @ 400 V
auf Bestellung 22620 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 14.96 EUR |
| 10+ | 10.15 EUR |
| 100+ | 7.43 EUR |
| 500+ | 7.22 EUR |