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NTMTS001N06CTXG

NTMTS001N06CTXG onsemi

ntmts001n06c-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 60V 53.7A/376A 8DFNW
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53.7A (Ta), 376A (Tc)
Rds On (Max) @ Id, Vgs: 0.91mOhm @ 50A, 10V
Power Dissipation (Max): 5W (Ta), 244W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8705 pF @ 30 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+2.34 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NTMTS001N06CTXG onsemi

Description: MOSFET N-CH 60V 53.7A/376A 8DFNW, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 53.7A (Ta), 376A (Tc), Rds On (Max) @ Id, Vgs: 0.91mOhm @ 50A, 10V, Power Dissipation (Max): 5W (Ta), 244W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-DFNW (8.3x8.4), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8705 pF @ 30 V.

Weitere Produktangebote NTMTS001N06CTXG nach Preis ab 2.41 EUR bis 5.37 EUR

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NTMTS001N06CTXG NTMTS001N06CTXG Hersteller : onsemi NTMTS001N06C-D.PDF MOSFETs T6 60V SG PQFN8x8 EXPANSI
auf Bestellung 6989 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.32 EUR
10+3.98 EUR
100+2.87 EUR
500+2.6 EUR
3000+2.41 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NTMTS001N06CTXG NTMTS001N06CTXG Hersteller : onsemi ntmts001n06c-d.pdf Description: MOSFET N-CH 60V 53.7A/376A 8DFNW
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53.7A (Ta), 376A (Tc)
Rds On (Max) @ Id, Vgs: 0.91mOhm @ 50A, 10V
Power Dissipation (Max): 5W (Ta), 244W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8705 pF @ 30 V
auf Bestellung 5197 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.37 EUR
10+4.05 EUR
100+2.89 EUR
500+2.59 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
NTMTS001N06CTXG NTMTS001N06CTXG Hersteller : ON Semiconductor ntmts001n06c-d.pdf Trans MOSFET N-CH 60V 53.7A 8-Pin TDFNW EP T/R
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NTMTS001N06CTXG NTMTS001N06CTXG Hersteller : ON Semiconductor ntmts001n06c-d.pdf Trans MOSFET N-CH 60V 53.7A 8-Pin TDFNW EP T/R
Produkt ist nicht verfügbar
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NTMTS001N06CTXG Hersteller : ONSEMI ntmts001n06c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 376A; Idm: 900A; 122W; Power88
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 376A
Pulsed drain current: 900A
Power dissipation: 122W
Case: Power88
Gate-source voltage: ±20V
On-state resistance: 910µΩ
Mounting: SMD
Gate charge: 113nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH