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NTMTS001N06CTXG

NTMTS001N06CTXG onsemi

ntmts001n06c-d.pdf
Hersteller: onsemi
Description: MOSFET N-CH 60V 53.7A/376A 8DFNW
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53.7A (Ta), 376A (Tc)
Rds On (Max) @ Id, Vgs: 0.91mOhm @ 50A, 10V
Power Dissipation (Max): 5W (Ta), 244W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8705 pF @ 30 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+2.09 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NTMTS001N06CTXG onsemi

Description: MOSFET N-CH 60V 53.7A/376A 8DFNW, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 53.7A (Ta), 376A (Tc), Rds On (Max) @ Id, Vgs: 0.91mOhm @ 50A, 10V, Power Dissipation (Max): 5W (Ta), 244W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-DFNW (8.3x8.4), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8705 pF @ 30 V.

Weitere Produktangebote NTMTS001N06CTXG nach Preis ab 2.43 EUR bis 6.65 EUR

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NTMTS001N06CTXG NTMTS001N06CTXG onsemi ntmts001n06c-d.pdf Description: MOSFET N-CH 60V 53.7A/376A 8DFNW
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53.7A (Ta), 376A (Tc)
Rds On (Max) @ Id, Vgs: 0.91mOhm @ 50A, 10V
Power Dissipation (Max): 5W (Ta), 244W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8705 pF @ 30 V
auf Bestellung 5372 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.56 EUR
10+4.31 EUR
100+3.04 EUR
500+2.56 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NTMTS001N06CTXG NTMTS001N06CTXG onsemi ntmts001n06c-d.pdf MOSFETs T6 60V SG PQFN8x8 EXPANSI
auf Bestellung 6658 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.65 EUR
10+3.48 EUR
100+2.68 EUR
500+2.43 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NTMTS001N06CTXG ntmts001n06c-d.pdf
NTMTS001N06CTXG
Hersteller: onsemi
Description: MOSFET N-CH 60V 53.7A/376A 8DFNW
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53.7A (Ta), 376A (Tc)
Rds On (Max) @ Id, Vgs: 0.91mOhm @ 50A, 10V
Power Dissipation (Max): 5W (Ta), 244W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8705 pF @ 30 V
auf Bestellung 5372 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+6.56 EUR
10+4.31 EUR
100+3.04 EUR
500+2.56 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NTMTS001N06CTXG ntmts001n06c-d.pdf
NTMTS001N06CTXG
Hersteller: onsemi
MOSFETs T6 60V SG PQFN8x8 EXPANSI
auf Bestellung 6658 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+6.65 EUR
10+3.48 EUR
100+2.68 EUR
500+2.43 EUR
Im Einkaufswagen  Stück im Wert von  UAH