NTMTS002N08MC onsemi
Hersteller: onsemiDescription: PTNG 80V IN CEBU PQFN88
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 229A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 90A, 10V
Power Dissipation (Max): 3.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 540µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 40 V
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 4.87 EUR |
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Technische Details NTMTS002N08MC onsemi
Description: PTNG 80V IN CEBU PQFN88, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 229A (Tc), Rds On (Max) @ Id, Vgs: 2mOhm @ 90A, 10V, Power Dissipation (Max): 3.3W (Ta), Vgs(th) (Max) @ Id: 4V @ 540µA, Supplier Device Package: 8-DFNW (8.3x8.4), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 40 V.
Weitere Produktangebote NTMTS002N08MC nach Preis ab 4.87 EUR bis 11.49 EUR
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NTMTS002N08MC | Hersteller : onsemi |
Description: PTNG 80V IN CEBU PQFN88 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 229A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 90A, 10V Power Dissipation (Max): 3.3W (Ta) Vgs(th) (Max) @ Id: 4V @ 540µA Supplier Device Package: 8-DFNW (8.3x8.4) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 40 V |
auf Bestellung 26948 Stücke: Lieferzeit 10-14 Tag (e) |
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