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NTMTS002N08MC

NTMTS002N08MC onsemi


ntmts002n08mc-d.pdf Hersteller: onsemi
Description: PTNG 80V IN CEBU PQFN88
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 229A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 90A, 10V
Power Dissipation (Max): 3.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 540µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 40 V
auf Bestellung 30000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+4.99 EUR
Mindestbestellmenge: 3000
Produktrezensionen
Produktbewertung abgeben

Technische Details NTMTS002N08MC onsemi

Description: PTNG 80V IN CEBU PQFN88, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 229A (Tc), Rds On (Max) @ Id, Vgs: 2mOhm @ 90A, 10V, Power Dissipation (Max): 3.3W (Ta), Vgs(th) (Max) @ Id: 4V @ 540µA, Supplier Device Package: 8-DFNW (8.3x8.4), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 40 V.

Weitere Produktangebote NTMTS002N08MC nach Preis ab 6.62 EUR bis 10.24 EUR

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NTMTS002N08MC NTMTS002N08MC Hersteller : onsemi ntmts002n08mc-d.pdf Description: PTNG 80V IN CEBU PQFN88
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 229A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 90A, 10V
Power Dissipation (Max): 3.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 540µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 40 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+10.24 EUR
100+ 8.7 EUR
500+ 7.73 EUR
1000+ 6.62 EUR
Mindestbestellmenge: 2
NTMTS002N08MC NTMTS002N08MC Hersteller : ON Semiconductor ntmts002n08mc-d.pdf Power, Single N-Channel, DFNW8
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NTMTS002N08MC Hersteller : ON Semiconductor NTMTS002N08MC_D-2318989.pdf MOSFET PTNG 80V IN CEBU PQFN88 FOR INDUSTRIAL MARKET
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