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NTMTS002N10MCTXG

NTMTS002N10MCTXG onsemi


ntmts002n10mc-d.pdf Hersteller: onsemi
Description: PTNG 100V, SINGLE NCH, PQFN8X8 S
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 236A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 90A, 10V
Power Dissipation (Max): 9W (Ta), 255W (Tc)
Vgs(th) (Max) @ Id: 4V @ 520µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6305 pF @ 50 V
auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+5.26 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NTMTS002N10MCTXG onsemi

Description: PTNG 100V, SINGLE NCH, PQFN8X8 S, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 236A (Tc), Rds On (Max) @ Id, Vgs: 2.3mOhm @ 90A, 10V, Power Dissipation (Max): 9W (Ta), 255W (Tc), Vgs(th) (Max) @ Id: 4V @ 520µA, Supplier Device Package: 8-DFNW (8.3x8.4), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6305 pF @ 50 V.

Weitere Produktangebote NTMTS002N10MCTXG nach Preis ab 5.26 EUR bis 12.16 EUR

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NTMTS002N10MCTXG NTMTS002N10MCTXG Hersteller : onsemi ntmts002n10mc-d.pdf Description: PTNG 100V, SINGLE NCH, PQFN8X8 S
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 236A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 90A, 10V
Power Dissipation (Max): 9W (Ta), 255W (Tc)
Vgs(th) (Max) @ Id: 4V @ 520µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6305 pF @ 50 V
auf Bestellung 5866 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.16 EUR
10+8.25 EUR
100+6.02 EUR
500+5.26 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
NTMTS002N10MCTXG Hersteller : ON Semiconductor ntmts002n10mc-d.pdf Power MOSFET, Single N-Channel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTMTS002N10MCTXG Hersteller : ONSEMI ntmts002n10mc-d.pdf NTMTS002N10MCTXG SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH