NTMTS0D4N04CLTXG onsemi
Hersteller: onsemiDescription: MOSFET N-CH 40V 79.8A 8DFNW
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79.8A (Ta), 553.8A (Tc)
Rds On (Max) @ Id, Vgs: 0.4mOhm @ 50A, 10V
Power Dissipation (Max): 5W (Ta), 244W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 341 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20600 pF @ 20 V
auf Bestellung 554 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 10.31 EUR |
| 10+ | 6.95 EUR |
| 100+ | 5.15 EUR |
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Technische Details NTMTS0D4N04CLTXG onsemi
Description: MOSFET N-CH 40V 79.8A 8DFNW, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 79.8A (Ta), 553.8A (Tc), Rds On (Max) @ Id, Vgs: 0.4mOhm @ 50A, 10V, Power Dissipation (Max): 5W (Ta), 244W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-DFNW (8.3x8.4), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 341 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 20600 pF @ 20 V.
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NTMTS0D4N04CLTXG | Hersteller : onsemi |
Description: MOSFET N-CH 40V 79.8A 8DFNW Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 79.8A (Ta), 553.8A (Tc) Rds On (Max) @ Id, Vgs: 0.4mOhm @ 50A, 10V Power Dissipation (Max): 5W (Ta), 244W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFNW (8.3x8.4) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 341 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20600 pF @ 20 V |
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| NTMTS0D4N04CLTXG | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 553.8A; Idm: 900A; 122W Gate charge: 163nC On-state resistance: 0.4mΩ Power dissipation: 122W Gate-source voltage: ±20V Drain current: 553.8A Drain-source voltage: 40V Pulsed drain current: 900A Case: Power88 Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar |
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