NTMTS0D4N04CTXG onsemi

Description: MOSFET N-CH 40V 79.8A/558A 8DFNW, Input Capacitance (Ciss) (Max) @ Vds: 16500 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 251 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: 8-DFNW (8.3x8.4), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 5W (Ta), 244W (Tc), Rds On (Max) @ Id, Vgs: 0.45mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 79.8A (Ta), 558A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).