NTMTS0D6N04CLTXG onsemi
Hersteller: onsemi
Description: MOSFET N-CH 40V 554.5A
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 554.5A (Tc)
Rds On (Max) @ Id, Vgs: 0.42mOhm @ 50A, 10V
Power Dissipation (Max): 5W
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 16013 pF @ 20 V
Description: MOSFET N-CH 40V 554.5A
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 554.5A (Tc)
Rds On (Max) @ Id, Vgs: 0.42mOhm @ 50A, 10V
Power Dissipation (Max): 5W
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 16013 pF @ 20 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 7.43 EUR |
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Technische Details NTMTS0D6N04CLTXG onsemi
Description: MOSFET N-CH 40V 554.5A, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 554.5A (Tc), Rds On (Max) @ Id, Vgs: 0.42mOhm @ 50A, 10V, Power Dissipation (Max): 5W, Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 8-DFNW (8.3x8.4), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 16013 pF @ 20 V.
Weitere Produktangebote NTMTS0D6N04CLTXG nach Preis ab 9.92 EUR bis 21.01 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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NTMTS0D6N04CLTXG | Hersteller : onsemi |
Description: MOSFET N-CH 40V 554.5A Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 554.5A (Tc) Rds On (Max) @ Id, Vgs: 0.42mOhm @ 50A, 10V Power Dissipation (Max): 5W Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-DFNW (8.3x8.4) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 16013 pF @ 20 V |
auf Bestellung 6477 Stücke: Lieferzeit 10-14 Tag (e) |
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