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NTMTS0D7N04CLTXG

NTMTS0D7N04CLTXG onsemi

NTMTS0D7N04CL-D.PDF Hersteller: onsemi
Description: MOSFET N-CH 40V 67A/433A 8DFNW
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Ta), 433A (Tc)
Rds On (Max) @ Id, Vgs: 0.63mOhm @ 50A, 10V
Power Dissipation (Max): 4.9W (Ta), 205W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12238 pF @ 25 V
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Technische Details NTMTS0D7N04CLTXG onsemi

Description: MOSFET N-CH 40V 67A/433A 8DFNW, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 67A (Ta), 433A (Tc), Rds On (Max) @ Id, Vgs: 0.63mOhm @ 50A, 10V, Power Dissipation (Max): 4.9W (Ta), 205W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-DFNW (8.3x8.4), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12238 pF @ 25 V.

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NTMTS0D7N04CLTXG NTMTS0D7N04CLTXG Hersteller : onsemi NTMTS0D7N04CL-D.PDF Description: MOSFET N-CH 40V 67A/433A 8DFNW
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Ta), 433A (Tc)
Rds On (Max) @ Id, Vgs: 0.63mOhm @ 50A, 10V
Power Dissipation (Max): 4.9W (Ta), 205W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12238 pF @ 25 V
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NTMTS0D7N04CLTXG NTMTS0D7N04CLTXG Hersteller : ON Semiconductor NTMTS0D7N04CL-D-1664520.pdf MOSFET AFSM T6 40V LL NCH
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