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NTMTS0D7N06CLTXG

NTMTS0D7N06CLTXG onsemi


ntmts0d7n06cl-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 60V 62.2A/477A 8DFNW
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62.2A (Ta), 477A (Tc)
Rds On (Max) @ Id, Vgs: 0.68mOhm @ 50A, 10V
Power Dissipation (Max): 5W (Ta), 294.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16200 pF @ 25 V
auf Bestellung 15000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+2.96 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NTMTS0D7N06CLTXG onsemi

Description: MOSFET N-CH 60V 62.2A/477A 8DFNW, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 62.2A (Ta), 477A (Tc), Rds On (Max) @ Id, Vgs: 0.68mOhm @ 50A, 10V, Power Dissipation (Max): 5W (Ta), 294.6W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-DFNW (8.3x8.4), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 16200 pF @ 25 V.

Weitere Produktangebote NTMTS0D7N06CLTXG nach Preis ab 4.41 EUR bis 9.66 EUR

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NTMTS0D7N06CLTXG NTMTS0D7N06CLTXG Hersteller : onsemi ntmts0d7n06cl-d.pdf Description: MOSFET N-CH 60V 62.2A/477A 8DFNW
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62.2A (Ta), 477A (Tc)
Rds On (Max) @ Id, Vgs: 0.68mOhm @ 50A, 10V
Power Dissipation (Max): 5W (Ta), 294.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16200 pF @ 25 V
auf Bestellung 16657 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.92 EUR
10+5.18 EUR
100+4.52 EUR
500+4.41 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
NTMTS0D7N06CLTXG NTMTS0D7N06CLTXG Hersteller : onsemi NTMTS0D7N06CL_D-2319120.pdf MOSFETs AFSM T6 60V LL NCH
auf Bestellung 1516 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+9.66 EUR
10+6.81 EUR
100+5.12 EUR
500+4.96 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NTMTS0D7N06CLTXG Hersteller : ONSEMI ntmts0d7n06cl-d.pdf NTMTS0D7N06CLTXG SMD N channel transistors
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