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NTMTS0D7N06CTXG

NTMTS0D7N06CTXG onsemi

ntmts0d7n06c-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 60V 60.5A/464A 8DFNW
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60.5A (Ta), 464A (Tc)
Rds On (Max) @ Id, Vgs: 0.72mOhm @ 50A, 10V
Power Dissipation (Max): 5W (Ta), 294.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11535 pF @ 30 V
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Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.78 EUR
10+5.16 EUR
100+3.67 EUR
500+3.03 EUR
1000+2.90 EUR
Mindestbestellmenge: 3
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Technische Details NTMTS0D7N06CTXG onsemi

Description: MOSFET N-CH 60V 60.5A/464A 8DFNW, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60.5A (Ta), 464A (Tc), Rds On (Max) @ Id, Vgs: 0.72mOhm @ 50A, 10V, Power Dissipation (Max): 5W (Ta), 294.6W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-DFNW (8.3x8.4), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11535 pF @ 30 V.

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NTMTS0D7N06CTXG Hersteller : ONSEMI ntmts0d7n06c-d.pdf NTMTS0D7N06CTXG SMD N channel transistors
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NTMTS0D7N06CTXG NTMTS0D7N06CTXG Hersteller : onsemi ntmts0d7n06c-d.pdf Description: MOSFET N-CH 60V 60.5A/464A 8DFNW
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60.5A (Ta), 464A (Tc)
Rds On (Max) @ Id, Vgs: 0.72mOhm @ 50A, 10V
Power Dissipation (Max): 5W (Ta), 294.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11535 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTMTS0D7N06CTXG NTMTS0D7N06CTXG Hersteller : onsemi NTMTS0D7N06C_D-2318837.pdf MOSFET AFSM T6 60V SG NCH
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