NTMTSC002N10MCTXG onsemi
Hersteller: onsemi
Description: MOSFET N-CH 100V 45A/236A 8TDFNW
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 236A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 90A, 10V
Power Dissipation (Max): 9W (Ta), 255W (Tc)
Vgs(th) (Max) @ Id: 4V @ 520µA
Supplier Device Package: 8-TDFNW (8.3x8.4)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6305 pF @ 50 V
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Technische Details NTMTSC002N10MCTXG onsemi
Description: MOSFET N-CH 100V 45A/236A 8TDFNW, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 236A (Tc), Rds On (Max) @ Id, Vgs: 2mOhm @ 90A, 10V, Power Dissipation (Max): 9W (Ta), 255W (Tc), Vgs(th) (Max) @ Id: 4V @ 520µA, Supplier Device Package: 8-TDFNW (8.3x8.4), Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6305 pF @ 50 V.
Weitere Produktangebote NTMTSC002N10MCTXG nach Preis ab 4.96 EUR bis 14.54 EUR
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NTMTSC002N10MCTXG | onsemi |
MOSFETs Single N-Channel Power MOSFET 100V, 236A, 2.0mohm |
auf Bestellung 5197 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMTSC002N10MCTXG | onsemi |
Description: MOSFET N-CH 100V 45A/236A 8TDFNW Input Capacitance (Ciss) (Max) @ Vds: 6305 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Supplier Device Package: 8-TDFNW (8.3x8.4) Vgs(th) (Max) @ Id: 4V @ 520µA Power Dissipation (Max): 9W (Ta), 255W (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 90A, 10V Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 236A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
auf Bestellung 4327 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMTSC002N10MCTXG | ONSEMI |
Description: ONSEMI - NTMTSC002N10MCTXG - Leistungs-MOSFET, n-Kanal, 100 V, 236 A, 0.0017 ohm, DFNW, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 236A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 255W Anzahl der Pins: 8Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0017ohm |
auf Bestellung 68 Stücke: Lieferzeit 14-21 Tag (e) |
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Hersteller: onsemi
MOSFETs Single N-Channel Power MOSFET 100V, 236A, 2.0mohm
MOSFETs Single N-Channel Power MOSFET 100V, 236A, 2.0mohm
auf Bestellung 5197 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 10.36 EUR |
| 10+ | 7.14 EUR |
| 100+ | 5.84 EUR |
| 500+ | 5.76 EUR |
| 1000+ | 5.37 EUR |
| 3000+ | 4.96 EUR |
| NTMTSC002N10MCTXG |
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Hersteller: onsemi
Description: MOSFET N-CH 100V 45A/236A 8TDFNW
Input Capacitance (Ciss) (Max) @ Vds: 6305 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Supplier Device Package: 8-TDFNW (8.3x8.4)
Vgs(th) (Max) @ Id: 4V @ 520µA
Power Dissipation (Max): 9W (Ta), 255W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 236A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 45A/236A 8TDFNW
Input Capacitance (Ciss) (Max) @ Vds: 6305 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Supplier Device Package: 8-TDFNW (8.3x8.4)
Vgs(th) (Max) @ Id: 4V @ 520µA
Power Dissipation (Max): 9W (Ta), 255W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 236A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 4327 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 13.42 EUR |
| 10+ | 9.04 EUR |
| 100+ | 6.57 EUR |
| 500+ | 6.25 EUR |
| NTMTSC002N10MCTXG |
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Hersteller: ONSEMI
Description: ONSEMI - NTMTSC002N10MCTXG - Leistungs-MOSFET, n-Kanal, 100 V, 236 A, 0.0017 ohm, DFNW, Oberflächenmontage
tariffCode: 85412900
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 236A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 255W
Anzahl der Pins: 8Pin(s)
productTraceability: Yes-Date/Lot Code
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0017ohm
Description: ONSEMI - NTMTSC002N10MCTXG - Leistungs-MOSFET, n-Kanal, 100 V, 236 A, 0.0017 ohm, DFNW, Oberflächenmontage
tariffCode: 85412900
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 236A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 255W
Anzahl der Pins: 8Pin(s)
productTraceability: Yes-Date/Lot Code
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0017ohm
auf Bestellung 68 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 18+ | 14.54 EUR |
| 24+ | 9.97 EUR |