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NTMTSC1D5N08MC

NTMTSC1D5N08MC onsemi

ntmtsc1d5n08mc-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 80V 33A/287A 8DFNW
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 287A (Tc)
Rds On (Max) @ Id, Vgs: 1.56mOhm @ 80A, 10V
Power Dissipation (Max): 3.3W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 650µA
Supplier Device Package: 8-TDFNW (8.3x8.4)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 40 V
auf Bestellung 2954 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.25 EUR
10+8.53 EUR
100+6.38 EUR
500+5.75 EUR
Mindestbestellmenge: 2
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Technische Details NTMTSC1D5N08MC onsemi

Description: MOSFET N-CH 80V 33A/287A 8DFNW, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 287A (Tc), Rds On (Max) @ Id, Vgs: 1.56mOhm @ 80A, 10V, Power Dissipation (Max): 3.3W (Ta), 250W (Tc), Vgs(th) (Max) @ Id: 4V @ 650µA, Supplier Device Package: 8-TDFNW (8.3x8.4), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 40 V.

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NTMTSC1D5N08MC NTMTSC1D5N08MC Hersteller : onsemi ntmtsc1d5n08mc-d.pdf MOSFETs PTNG 80V IN CEBU PQFN88
auf Bestellung 2074 Stücke:
Lieferzeit 10-14 Tag (e)
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1+12.36 EUR
10+8.92 EUR
100+7.25 EUR
500+7.22 EUR
1000+6.92 EUR
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NTMTSC1D5N08MC Hersteller : ON Semiconductor ntmtsc1d5n08mc-d.pdf Trans MOSFET N-CH 80V 33A 8-Pin TDFNW EP T/R
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NTMTSC1D5N08MC Hersteller : ONSEMI ntmtsc1d5n08mc-d.pdf NTMTSC1D5N08MC SMD N channel transistors
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NTMTSC1D5N08MC NTMTSC1D5N08MC Hersteller : onsemi ntmtsc1d5n08mc-d.pdf Description: MOSFET N-CH 80V 33A/287A 8DFNW
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 287A (Tc)
Rds On (Max) @ Id, Vgs: 1.56mOhm @ 80A, 10V
Power Dissipation (Max): 3.3W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 650µA
Supplier Device Package: 8-TDFNW (8.3x8.4)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 40 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH