auf Bestellung 2074 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 11.58 EUR |
| 10+ | 8.59 EUR |
| 100+ | 6.88 EUR |
| 500+ | 6.86 EUR |
| 1000+ | 6.78 EUR |
| 3000+ | 5.84 EUR |
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Technische Details NTMTSC1D5N08MC onsemi
Description: MOSFET N-CH 80V 33A/287A 8DFNW, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 287A (Tc), Rds On (Max) @ Id, Vgs: 1.56mOhm @ 80A, 10V, Power Dissipation (Max): 3.3W (Ta), 250W (Tc), Vgs(th) (Max) @ Id: 4V @ 650µA, Supplier Device Package: 8-TDFNW (8.3x8.4), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 40 V.
Weitere Produktangebote NTMTSC1D5N08MC nach Preis ab 5.75 EUR bis 12.25 EUR
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NTMTSC1D5N08MC | Hersteller : onsemi |
 Description: MOSFET N-CH 80V 33A/287A 8DFNWPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 287A (Tc) Rds On (Max) @ Id, Vgs: 1.56mOhm @ 80A, 10V Power Dissipation (Max): 3.3W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 650µA Supplier Device Package: 8-TDFNW (8.3x8.4) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 40 V |
auf Bestellung 2954 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTMTSC1D5N08MC | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 80V 33A 8-Pin TDFNW EP T/R |
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| NTMTSC1D5N08MC | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 287A; Idm: 3500A; 250W; DFNW8 Kind of package: reel; tape Power dissipation: 250W Polarisation: unipolar Gate charge: 101nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 3500A Mounting: SMD Case: DFNW8 Drain-source voltage: 80V Drain current: 287A On-state resistance: 1.56mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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NTMTSC1D5N08MC | Hersteller : onsemi |
Description: MOSFET N-CH 80V 33A/287A 8DFNW Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 287A (Tc) Rds On (Max) @ Id, Vgs: 1.56mOhm @ 80A, 10V Power Dissipation (Max): 3.3W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 650µA Supplier Device Package: 8-TDFNW (8.3x8.4) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 40 V |
Produkt ist nicht verfügbar |
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| NTMTSC1D5N08MC | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 287A; Idm: 3500A; 250W; DFNW8 Kind of package: reel; tape Power dissipation: 250W Polarisation: unipolar Gate charge: 101nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 3500A Mounting: SMD Case: DFNW8 Drain-source voltage: 80V Drain current: 287A On-state resistance: 1.56mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |