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NTMTSC1D5N08MC

NTMTSC1D5N08MC onsemi

ntmtsc1d5n08mc-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 80V 33A/287A 8DFNW
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 287A (Tc)
Rds On (Max) @ Id, Vgs: 1.56mOhm @ 80A, 10V
Power Dissipation (Max): 3.3W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 650µA
Supplier Device Package: 8-TDFNW (8.3x8.4)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 40 V
auf Bestellung 2965 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+10.95 EUR
100+ 9.77 EUR
500+ 8.62 EUR
1000+ 7.76 EUR
Mindestbestellmenge: 2
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Technische Details NTMTSC1D5N08MC onsemi

Description: MOSFET N-CH 80V 33A/287A 8DFNW, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 287A (Tc), Rds On (Max) @ Id, Vgs: 1.56mOhm @ 80A, 10V, Power Dissipation (Max): 3.3W (Ta), 250W (Tc), Vgs(th) (Max) @ Id: 4V @ 650µA, Supplier Device Package: 8-TDFNW (8.3x8.4), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 40 V.

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NTMTSC1D5N08MC NTMTSC1D5N08MC Hersteller : onsemi NTMTSC1D5N08MC_D-2319096.pdf MOSFET PTNG 80V IN CEBU PQFN88
auf Bestellung 954 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
4+16.46 EUR
10+ 14.12 EUR
25+ 13.39 EUR
100+ 11.78 EUR
250+ 11.39 EUR
500+ 10.37 EUR
1000+ 9.39 EUR
Mindestbestellmenge: 4
NTMTSC1D5N08MC NTMTSC1D5N08MC Hersteller : onsemi ntmtsc1d5n08mc-d.pdf Description: MOSFET N-CH 80V 33A/287A 8DFNW
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 287A (Tc)
Rds On (Max) @ Id, Vgs: 1.56mOhm @ 80A, 10V
Power Dissipation (Max): 3.3W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 650µA
Supplier Device Package: 8-TDFNW (8.3x8.4)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 40 V
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