| Anzahl | Preis |
|---|---|
| 1+ | 11.23 EUR |
| 10+ | 8.36 EUR |
| 100+ | 6.55 EUR |
| 1000+ | 6.2 EUR |
| 3000+ | 5.56 EUR |
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Technische Details NTMTSC1D5N08MC onsemi
Description: MOSFET N-CH 80V 33A/287A 8DFNW, Rds On (Max) @ Id, Vgs: 1.56mOhm @ 80A, 10V, Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 287A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Wettable Flank, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: 8-TDFNW (8.3x8.4), Vgs(th) (Max) @ Id: 4V @ 650µA, Power Dissipation (Max): 3.3W (Ta), 250W (Tc).
Weitere Produktangebote NTMTSC1D5N08MC nach Preis ab 5.75 EUR bis 12.25 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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NTMTSC1D5N08MC | onsemi |
 Description: MOSFET N-CH 80V 33A/287A 8DFNWInput Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: 8-TDFNW (8.3x8.4) Vgs(th) (Max) @ Id: 4V @ 650µA Power Dissipation (Max): 3.3W (Ta), 250W (Tc) Rds On (Max) @ Id, Vgs: 1.56mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 287A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
auf Bestellung 2954 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTMTSC1D5N08MC | ONN |
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auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NTMTSC1D5N08MC |
|
Hersteller: onsemi
Description: MOSFET N-CH 80V 33A/287A 8DFNW
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-TDFNW (8.3x8.4)
Vgs(th) (Max) @ Id: 4V @ 650µA
Power Dissipation (Max): 3.3W (Ta), 250W (Tc)
Rds On (Max) @ Id, Vgs: 1.56mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 287A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 80V 33A/287A 8DFNW
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-TDFNW (8.3x8.4)
Vgs(th) (Max) @ Id: 4V @ 650µA
Power Dissipation (Max): 3.3W (Ta), 250W (Tc)
Rds On (Max) @ Id, Vgs: 1.56mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 287A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 2954 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 12.25 EUR |
| 10+ | 8.53 EUR |
| 100+ | 6.38 EUR |
| 500+ | 5.75 EUR |
| NTMTSC1D5N08MC |
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Hersteller: ONN
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)