
auf Bestellung 3109 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 11.18 EUR |
10+ | 7.92 EUR |
100+ | 6.02 EUR |
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Technische Details NTMTSC1D5N08MC onsemi
Description: MOSFET N-CH 80V 33A/287A 8DFNW, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 287A (Tc), Rds On (Max) @ Id, Vgs: 1.56mOhm @ 80A, 10V, Power Dissipation (Max): 3.3W (Ta), 250W (Tc), Vgs(th) (Max) @ Id: 4V @ 650µA, Supplier Device Package: 8-TDFNW (8.3x8.4), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 40 V.
Weitere Produktangebote NTMTSC1D5N08MC nach Preis ab 5.75 EUR bis 12.25 EUR
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NTMTSC1D5N08MC | Hersteller : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 287A (Tc) Rds On (Max) @ Id, Vgs: 1.56mOhm @ 80A, 10V Power Dissipation (Max): 3.3W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 650µA Supplier Device Package: 8-TDFNW (8.3x8.4) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 40 V |
auf Bestellung 2954 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMTSC1D5N08MC | Hersteller : ON Semiconductor |
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NTMTSC1D5N08MC | Hersteller : ONSEMI |
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Produkt ist nicht verfügbar |
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NTMTSC1D5N08MC | Hersteller : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 287A (Tc) Rds On (Max) @ Id, Vgs: 1.56mOhm @ 80A, 10V Power Dissipation (Max): 3.3W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 650µA Supplier Device Package: 8-TDFNW (8.3x8.4) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 40 V |
Produkt ist nicht verfügbar |