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NTMYS3D3N06CLTWG

NTMYS3D3N06CLTWG onsemi

NTMYS3D3N06CL-D.PDF Hersteller: onsemi
MOSFETs 60V 3.0mOhms 133A Single N-Channel
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
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1+4.72 EUR
10+3.50 EUR
100+2.48 EUR
500+2.15 EUR
1000+2.06 EUR
3000+1.85 EUR
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Technische Details NTMYS3D3N06CLTWG onsemi

Description: MOSFET N-CH 60V 26A/133A LFPAK4, Packaging: Tape & Reel (TR), Package / Case: SOT-1023, 4-LFPAK, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 133A (Tc), Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V, Power Dissipation (Max): 3.9W (Ta), 100W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: LFPAK4 (5x6), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 40.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V.

Weitere Produktangebote NTMYS3D3N06CLTWG nach Preis ab 1.73 EUR bis 5.09 EUR

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NTMYS3D3N06CLTWG NTMYS3D3N06CLTWG Hersteller : onsemi NTMYS3D3N06CL-D.PDF Description: MOSFET N-CH 60V 26A/133A LFPAK4
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 133A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: LFPAK4 (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
auf Bestellung 1485 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.09 EUR
10+3.31 EUR
100+2.30 EUR
500+1.87 EUR
1000+1.73 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
NTMYS3D3N06CLTWG NTMYS3D3N06CLTWG Hersteller : onsemi NTMYS3D3N06CL-D.PDF Description: MOSFET N-CH 60V 26A/133A LFPAK4
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 133A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: LFPAK4 (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
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Im Einkaufswagen  Stück im Wert von  UAH