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NTNS3190NZT5G

NTNS3190NZT5G onsemi

on_semiconductor_onsms25061_1-1740644.pdf Hersteller: onsemi
MOSFET NFET XLLGA3 20V 230MA 1.4
auf Bestellung 6653 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
33+1.59 EUR
39+ 1.36 EUR
100+ 1.02 EUR
500+ 0.8 EUR
1000+ 0.62 EUR
2500+ 0.57 EUR
5000+ 0.54 EUR
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Technische Details NTNS3190NZT5G onsemi

Description: MOSFET N-CH 20V 224MA 3XLLGA, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 224mA (Ta), Rds On (Max) @ Id, Vgs: 1.4Ohm @ 100mA, 4.5V, Power Dissipation (Max): 120mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 3-XLLGA (0.62x0.62), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 15.8 pF @ 15 V.

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NTNS3190NZT5G NTNS3190NZT5G Hersteller : onsemi NTNS3190NZ.pdf Description: MOSFET N-CH 20V 224MA 3XLLGA
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 224mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 100mA, 4.5V
Power Dissipation (Max): 120mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 3-XLLGA (0.62x0.62)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15.8 pF @ 15 V
Produkt ist nicht verfügbar
NTNS3190NZT5G NTNS3190NZT5G Hersteller : onsemi NTNS3190NZ.pdf Description: MOSFET N-CH 20V 224MA 3XLLGA
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 224mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 100mA, 4.5V
Power Dissipation (Max): 120mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 3-XLLGA (0.62x0.62)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15.8 pF @ 15 V
Produkt ist nicht verfügbar