| Anzahl | Preis |
|---|---|
| 3+ | 1.08 EUR |
| 10+ | 0.92 EUR |
| 100+ | 0.69 EUR |
| 500+ | 0.54 EUR |
| 1000+ | 0.42 EUR |
| 2500+ | 0.39 EUR |
| 5000+ | 0.36 EUR |
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Technische Details NTNS3190NZT5G onsemi
Description: MOSFET N-CH 20V 224MA 3XLLGA, Input Capacitance (Ciss) (Max) @ Vds: 15.8 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Part Status: Obsolete, Supplier Device Package: 3-XLLGA (0.62x0.62), Rds On (Max) @ Id, Vgs: 1.4Ohm @ 100mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 224mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-XFDFN, Packaging: Tape & Reel (TR), Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 120mW (Ta).
Weitere Produktangebote NTNS3190NZT5G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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NTNS3190NZT5G | onsemi |
 Description: MOSFET N-CH 20V 224MA 3XLLGAInput Capacitance (Ciss) (Max) @ Vds: 15.8 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Obsolete Supplier Device Package: 3-XLLGA (0.62x0.62) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 100mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 224mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-XFDFN Packaging: Tape & Reel (TR) Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 120mW (Ta) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
|
NTNS3190NZT5G | onsemi |
Description: MOSFET N-CH 20V 224MA 3XLLGA Input Capacitance (Ciss) (Max) @ Vds: 15.8 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Obsolete Supplier Device Package: 3-XLLGA (0.62x0.62) Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 120mW (Ta) Current - Continuous Drain (Id) @ 25°C: 224mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-XFDFN Packaging: Cut Tape (CT) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 100mA, 4.5V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NTNS3190NZT5G |
|
Hersteller: onsemi
Description: MOSFET N-CH 20V 224MA 3XLLGA
Input Capacitance (Ciss) (Max) @ Vds: 15.8 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Obsolete
Supplier Device Package: 3-XLLGA (0.62x0.62)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 100mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 224mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 120mW (Ta)
Description: MOSFET N-CH 20V 224MA 3XLLGA
Input Capacitance (Ciss) (Max) @ Vds: 15.8 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Obsolete
Supplier Device Package: 3-XLLGA (0.62x0.62)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 100mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 224mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 120mW (Ta)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTNS3190NZT5G |
|
Hersteller: onsemi
Description: MOSFET N-CH 20V 224MA 3XLLGA
Input Capacitance (Ciss) (Max) @ Vds: 15.8 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Obsolete
Supplier Device Package: 3-XLLGA (0.62x0.62)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 120mW (Ta)
Current - Continuous Drain (Id) @ 25°C: 224mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Cut Tape (CT)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 100mA, 4.5V
Description: MOSFET N-CH 20V 224MA 3XLLGA
Input Capacitance (Ciss) (Max) @ Vds: 15.8 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Obsolete
Supplier Device Package: 3-XLLGA (0.62x0.62)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 120mW (Ta)
Current - Continuous Drain (Id) @ 25°C: 224mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Cut Tape (CT)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 100mA, 4.5V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH