NTNS3A65PZT5G onsemi

Description: MOSFET P-CH 20V 281MA SOT883, Input Capacitance (Ciss) (Max) @ Vds: 44 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Part Status: Obsolete, Supplier Device Package: SOT-883 (XDFN3) (1x0.6), Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 155mW (Ta), Rds On (Max) @ Id, Vgs: 1.3Ohm @ 200mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 281mA (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-XFDFN, Packaging: Tape & Reel (TR).