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NTNS3A65PZT5G

NTNS3A65PZT5G onsemi

ntns3a65pz-d.pdf Hersteller: onsemi
Description: MOSFET P-CH 20V 281MA SOT883
Packaging: Bulk
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 281mA (Ta)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 200mA, 4.5V
Power Dissipation (Max): 155mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-883 (XDFN3) (1x0.6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 44 pF @ 10 V
auf Bestellung 315809 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3957+0.14 EUR
Mindestbestellmenge: 3957
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Technische Details NTNS3A65PZT5G onsemi

Description: MOSFET P-CH 20V 281MA SOT883, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 281mA (Ta), Rds On (Max) @ Id, Vgs: 1.3Ohm @ 200mA, 4.5V, Power Dissipation (Max): 155mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-883 (XDFN3) (1x0.6), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 44 pF @ 10 V.

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NTNS3A65PZT5G NTNS3A65PZT5G Hersteller : onsemi NTNS3A65PZ_D-2318961.pdf MOSFET PFET SOT883 20V 235MA
auf Bestellung 45 Stücke:
Lieferzeit 10-14 Tag (e)
NTNS3A65PZT5G NTNS3A65PZT5G Hersteller : ON Semiconductor ntns3a65pz-d.pdf Trans MOSFET P-CH 20V 0.281A 3-Pin XDFN T/R
Produkt ist nicht verfügbar
NTNS3A65PZT5G NTNS3A65PZT5G Hersteller : onsemi ntns3a65pz-d.pdf Description: MOSFET P-CH 20V 281MA SOT883
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 281mA (Ta)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 200mA, 4.5V
Power Dissipation (Max): 155mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-883 (XDFN3) (1x0.6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 44 pF @ 10 V
Produkt ist nicht verfügbar
NTNS3A65PZT5G NTNS3A65PZT5G Hersteller : onsemi ntns3a65pz-d.pdf Description: MOSFET P-CH 20V 281MA SOT883
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 281mA (Ta)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 200mA, 4.5V
Power Dissipation (Max): 155mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-883 (XDFN3) (1x0.6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 44 pF @ 10 V
Produkt ist nicht verfügbar