NTP055N65S3H onsemi
Hersteller: onsemiDescription: MOSFET N-CH 650V 47A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 23.5A, 10V
Power Dissipation (Max): 305W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4.8mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 400 V
auf Bestellung 1509 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 11.04 EUR |
| 10+ | 8.13 EUR |
| 100+ | 7.1 EUR |
| 800+ | 6.97 EUR |
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Technische Details NTP055N65S3H onsemi
Description: MOSFET N-CH 650V 47A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 47A (Tc), Rds On (Max) @ Id, Vgs: 55mOhm @ 23.5A, 10V, Power Dissipation (Max): 305W (Tc), Vgs(th) (Max) @ Id: 4V @ 4.8mA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 400 V.
Weitere Produktangebote NTP055N65S3H nach Preis ab 7.25 EUR bis 11.05 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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NTP055N65S3H | Hersteller : onsemi |
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NTP055N65S3H | Hersteller : ON Semiconductor |
Single N-Channel Power MOSFET |
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| NTP055N65S3H | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 47A; Idm: 132A; 305W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Case: TO220-3 On-state resistance: 55mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 96nC Gate-source voltage: ±30V Pulsed drain current: 132A Drain current: 47A Power dissipation: 305W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| NTP055N65S3H | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 47A; Idm: 132A; 305W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Case: TO220-3 On-state resistance: 55mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 96nC Gate-source voltage: ±30V Pulsed drain current: 132A Drain current: 47A Power dissipation: 305W |
Produkt ist nicht verfügbar |