NTP055N65S3H onsemi
Hersteller: onsemiDescription: MOSFET N-CH 650V 47A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 23.5A, 10V
Power Dissipation (Max): 305W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4.8mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 400 V
auf Bestellung 633 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 15.54 EUR |
| 10+ | 10.72 EUR |
| 100+ | 7.99 EUR |
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Technische Details NTP055N65S3H onsemi
Description: MOSFET N-CH 650V 47A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 47A (Tc), Rds On (Max) @ Id, Vgs: 55mOhm @ 23.5A, 10V, Power Dissipation (Max): 305W (Tc), Vgs(th) (Max) @ Id: 4V @ 4.8mA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 400 V.
Weitere Produktangebote NTP055N65S3H nach Preis ab 7.62 EUR bis 15.73 EUR
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NTP055N65S3H | Hersteller : onsemi |
MOSFETs FAST 650V TO220 |
auf Bestellung 3626 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTP055N65S3H | Hersteller : ON Semiconductor |
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auf Bestellung 685 Stücke: Lieferzeit 21-28 Tag (e) |