
NTP095N65S3H onsemi

Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.8mA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2833 pF @ 400 V
auf Bestellung 3135 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
3+ | 6.81 EUR |
50+ | 4.71 EUR |
100+ | 4.70 EUR |
500+ | 4.61 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NTP095N65S3H onsemi
Description: POWER MOSFET, N-CHANNEL, SUPERFE, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V, Power Dissipation (Max): 208W (Tc), Vgs(th) (Max) @ Id: 4V @ 2.8mA, Supplier Device Package: TO-220-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2833 pF @ 400 V.
Weitere Produktangebote NTP095N65S3H nach Preis ab 5.19 EUR bis 7.20 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
NTP095N65S3H | Hersteller : onsemi |
![]() |
auf Bestellung 771 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||
![]() |
NTP095N65S3H | Hersteller : ON Semiconductor |
![]() |
Produkt ist nicht verfügbar |
|||||||||
NTP095N65S3H | Hersteller : ONSEMI |
![]() |
Produkt ist nicht verfügbar |