NTP095N65S3HF onsemi
Hersteller: onsemiDescription: MOSFET N-CH 650V 36A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 18A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 5V @ 860µA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2930 pF @ 400 V
auf Bestellung 1278 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 9.94 EUR |
| 50+ | 6.11 EUR |
| 100+ | 5.62 EUR |
| 500+ | 5.05 EUR |
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Technische Details NTP095N65S3HF onsemi
Description: MOSFET N-CH 650V 36A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 36A (Tc), Rds On (Max) @ Id, Vgs: 95mOhm @ 18A, 10V, Power Dissipation (Max): 272W (Tc), Vgs(th) (Max) @ Id: 5V @ 860µA, Supplier Device Package: TO-220-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2930 pF @ 400 V.
Weitere Produktangebote NTP095N65S3HF nach Preis ab 5.03 EUR bis 9.96 EUR
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NTP095N65S3HF | Hersteller : onsemi |
MOSFETs FRFET 650 V 65 A 95 mOhm TO-220 |
auf Bestellung 904 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTP095N65S3HF | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 650V 36A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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| NTP095N65S3HF | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 36A; Idm: 90A; 272W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Case: TO220-3 On-state resistance: 95mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 66nC Gate-source voltage: ±30V Pulsed drain current: 90A Drain current: 36A Power dissipation: 272W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| NTP095N65S3HF | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 36A; Idm: 90A; 272W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Case: TO220-3 On-state resistance: 95mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 66nC Gate-source voltage: ±30V Pulsed drain current: 90A Drain current: 36A Power dissipation: 272W |
Produkt ist nicht verfügbar |