NTP125N02R onsemi
Hersteller: onsemiDescription: MOSFET PWR N-CH 125A 24V TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.9A (Ta)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V
Power Dissipation (Max): 1.98W (Ta), 113.6W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 20 V
auf Bestellung 1330 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 833+ | 0.58 EUR |
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Technische Details NTP125N02R onsemi
Description: MOSFET PWR N-CH 125A 24V TO220AB, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15.9A (Ta), Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V, Power Dissipation (Max): 1.98W (Ta), 113.6W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: TO-220, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 24 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 20 V.
Weitere Produktangebote NTP125N02R
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| NTP125N02R |
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auf Bestellung 4099 Stücke: Lieferzeit 21-28 Tag (e) |
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| NTP125N02R | Hersteller : ONSEMI |
Description: ONSEMI - NTP125N02R - NTP125N02R, SINGLE MOSFETS tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 1330 Stücke: Lieferzeit 14-21 Tag (e) |