NTP6410ANG onsemi
Hersteller: onsemiDescription: MOSFET N-CH 100V 76A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 76A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
auf Bestellung 147 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 5.3 EUR |
| 50+ | 4.2 EUR |
| 100+ | 3.6 EUR |
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Technische Details NTP6410ANG onsemi
Description: MOSFET N-CH 100V 76A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 76A (Tc), Rds On (Max) @ Id, Vgs: 13mOhm @ 76A, 10V, Power Dissipation (Max): 188W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V.
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Preis |
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| NTP6410ANG | Hersteller : ON Semiconductor |
MOSFET NFET TO220 100V 76A 13MOH |
auf Bestellung 198 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTP6410ANG | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 76A; Idm: 305A; 188W; TO220-3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 76A On-state resistance: 13mΩ Type of transistor: N-MOSFET Power dissipation: 188W Gate charge: 0.12µC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 305A Mounting: THT Case: TO220-3 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| NTP6410ANG | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 76A; Idm: 305A; 188W; TO220-3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 76A On-state resistance: 13mΩ Type of transistor: N-MOSFET Power dissipation: 188W Gate charge: 0.12µC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 305A Mounting: THT Case: TO220-3 |
Produkt ist nicht verfügbar |