NTPF600N80S3Z onsemi
Hersteller: onsemiDescription: SF3 800V 600MOHM TO-220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tj)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 180µA
Supplier Device Package: TO-220FP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 725 pF @ 400 V
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1000+ | 2.14 EUR |
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Technische Details NTPF600N80S3Z onsemi
Description: SF3 800V 600MOHM TO-220F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tj), Rds On (Max) @ Id, Vgs: 600mOhm @ 4A, 10V, Power Dissipation (Max): 28W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 180µA, Supplier Device Package: TO-220FP, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 725 pF @ 400 V.
Weitere Produktangebote NTPF600N80S3Z nach Preis ab 2.27 EUR bis 6.11 EUR
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| NTPF600N80S3Z | Hersteller : onsemi |
MOSFETs MOSFET - Power, N-Channel, SUPERFET III, 800 V, 8 A, 600 mohm, TO-220F |
auf Bestellung 995 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTPF600N80S3Z | Hersteller : ON Semiconductor |
NTPF600N80S3Z |
Produkt ist nicht verfügbar |
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| NTPF600N80S3Z | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 21A; 28W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 8A Pulsed drain current: 21A Power dissipation: 28W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: THT Gate charge: 15.5nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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| NTPF600N80S3Z | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 21A; 28W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 8A Pulsed drain current: 21A Power dissipation: 28W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: THT Gate charge: 15.5nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |