| Anzahl | Privatkunde |
|---|---|
| 1+ | 7.6 EUR |
| 10+ | 4.99 EUR |
| 100+ | 3.69 EUR |
| 500+ | 3.09 EUR |
| 1000+ | 2.73 EUR |
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Technische Details NTPF600N80S3Z onsemi
Description: SF3 800V 600MOHM TO-220F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tj), Rds On (Max) @ Id, Vgs: 600mOhm @ 4A, 10V, Power Dissipation (Max): 28W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 180µA, Supplier Device Package: TO-220FP, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 725 pF @ 400 V.
Weitere Produktangebote NTPF600N80S3Z
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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NTPF600N80S3Z | onsemi |
 Description: SF3 800V 600MOHM TO-220FPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tj) Rds On (Max) @ Id, Vgs: 600mOhm @ 4A, 10V Power Dissipation (Max): 28W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 180µA Supplier Device Package: TO-220FP Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 725 pF @ 400 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
NTPF600N80S3Z | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 21A; 28W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 8A Pulsed drain current: 21A Power dissipation: 28W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: THT Gate charge: 15.5nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| NTPF600N80S3Z |
|
Hersteller: onsemi
Description: SF3 800V 600MOHM TO-220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tj)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 180µA
Supplier Device Package: TO-220FP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 725 pF @ 400 V
Description: SF3 800V 600MOHM TO-220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tj)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 180µA
Supplier Device Package: TO-220FP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 725 pF @ 400 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NTPF600N80S3Z |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 21A; 28W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Pulsed drain current: 21A
Power dissipation: 28W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 15.5nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 21A; 28W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Pulsed drain current: 21A
Power dissipation: 28W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 15.5nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH