auf Bestellung 191618 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 52+ | 1.02 EUR |
| 74+ | 0.7 EUR |
| 182+ | 0.29 EUR |
| 1000+ | 0.22 EUR |
| 3000+ | 0.16 EUR |
| 9000+ | 0.14 EUR |
| 24000+ | 0.13 EUR |
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Produktbewertung abgeben
Technische Details NTR1P02LT1G onsemi
Description: MOSFET P-CH 20V 1.3A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta), Rds On (Max) @ Id, Vgs: 220mOhm @ 750mA, 4.5V, Power Dissipation (Max): 400mW (Ta), Vgs(th) (Max) @ Id: 1.25V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4 V, Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 5 V.
Weitere Produktangebote NTR1P02LT1G nach Preis ab 0.093 EUR bis 0.4 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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NTR1P02LT1G | Hersteller : ON Semiconductor |
 Trans MOSFET P-CH 20V 1.3A 3-Pin SOT-23 T/R |
auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTR1P02LT1G | Hersteller : ON-Semicoductor |
Transistor P-Channel MOSFET; 20V; 12V; 350mOhm; 1,3A; 400mW; -55°C ~ 150°C; NTR1P02LT3G (10000/reel) NTR1P02LT1G TNTR1P02l Anzahl je Verpackung: 100 Stücke |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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| NTR1P02LT1G | Hersteller : ONSEMI |
NTR1P02LT1G SMD P channel transistors |
auf Bestellung 223 Stücke: Lieferzeit 7-14 Tag (e) |
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| NTR1P02LT1G | Hersteller : ON-Semicoductor |
Transistor P-Channel MOSFET; 20V; 20V; 280mOhm; 1A; 400mW; -55°C ~ 150°C; NTR1P02T3G (10000/reel) NTR1P02T1G TNTR1P02 Anzahl je Verpackung: 50 Stücke |
auf Bestellung 200 Stücke: Lieferzeit 7-14 Tag (e) |
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NTR1P02LT1G | Hersteller : onsemi |
Description: MOSFET P-CH 20V 1.3A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta) Rds On (Max) @ Id, Vgs: 220mOhm @ 750mA, 4.5V Power Dissipation (Max): 400mW (Ta) Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4 V Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 5 V |
Produkt ist nicht verfügbar |
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NTR1P02LT1G | Hersteller : onsemi |
Description: MOSFET P-CH 20V 1.3A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta) Rds On (Max) @ Id, Vgs: 220mOhm @ 750mA, 4.5V Power Dissipation (Max): 400mW (Ta) Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4 V Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 5 V |
Produkt ist nicht verfügbar |