NTR1P02LT1G ON Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.11 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
14-21 Tag (e)
Mindestmenge:
3000 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details NTR1P02LT1G ON Semiconductor
Description: MOSFET P-CH 20V 1.3A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta), Rds On (Max) @ Id, Vgs: 220mOhm @ 750mA, 4.5V, Power Dissipation (Max): 400mW (Ta), Vgs(th) (Max) @ Id: 1.25V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4 V, Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 5 V.
Weitere Produktangebote NTR1P02LT1G nach Preis ab 0.084 EUR bis 0.92 EUR
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NTR1P02LT1G | ON Semiconductor |
 Trans MOSFET P-CH 20V 1.3A 3-Pin SOT-23 T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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NTR1P02LT1G | ON Semiconductor |
Trans MOSFET P-CH 20V 1.3A 3-Pin SOT-23 T/R |
auf Bestellung 60000 Stücke: Lieferzeit 14-21 Tag (e) |
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NTR1P02LT1G | onsemi |
Description: MOSFET P-CH 20V 1.3A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta) Rds On (Max) @ Id, Vgs: 220mOhm @ 750mA, 4.5V Power Dissipation (Max): 400mW (Ta) Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4 V Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 5 V |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTR1P02LT1G | ON Semiconductor |
Trans MOSFET P-CH 20V 1.3A 3-Pin SOT-23 T/R |
auf Bestellung 5752 Stücke: Lieferzeit 14-21 Tag (e) |
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NTR1P02LT1G | ON Semiconductor |
Trans MOSFET P-CH 20V 1.3A 3-Pin SOT-23 T/R |
auf Bestellung 5752 Stücke: Lieferzeit 14-21 Tag (e) |
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NTR1P02LT1G | onsemi |
Description: MOSFET P-CH 20V 1.3A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta) Rds On (Max) @ Id, Vgs: 220mOhm @ 750mA, 4.5V Power Dissipation (Max): 400mW (Ta) Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4 V Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 5 V |
auf Bestellung 10671 Stücke: Lieferzeit 10-14 Tag (e) |
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NTR1P02LT1G | onsemi |
MOSFETs -20V -1.3A P-Channel |
auf Bestellung 2611 Stücke: Lieferzeit 10-14 Tag (e) |
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NTR1P02LT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -1.3A; 0.4W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.3A Power dissipation: 0.4W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 0.22Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 3.1nC |
auf Bestellung 3340 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NTR1P02LT1G | ON-Semiconductor |
Transistor P-Channel MOSFET; 20V; 12V; 350mOhm; 1,3A; 400mW; -55°C ~ 150°C; NTR1P02LT3G (10000/reel) NTR1P02LT1G TNTR1P02l Anzahl je Verpackung: 100 Stücke |
auf Bestellung 1380 Stücke: Lieferzeit 7-14 Tag (e) |
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| NTR1P02LT1G |
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Hersteller: ON Semiconductor
Trans MOSFET P-CH 20V 1.3A 3-Pin SOT-23 T/R
Trans MOSFET P-CH 20V 1.3A 3-Pin SOT-23 T/R
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.11 EUR |
| NTR1P02LT1G |
|
Hersteller: ON Semiconductor
Trans MOSFET P-CH 20V 1.3A 3-Pin SOT-23 T/R
Trans MOSFET P-CH 20V 1.3A 3-Pin SOT-23 T/R
auf Bestellung 60000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.11 EUR |
| 6000+ | 0.1 EUR |
| 9000+ | 0.1 EUR |
| 12000+ | 0.096 EUR |
| 27000+ | 0.093 EUR |
| NTR1P02LT1G |
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Hersteller: onsemi
Description: MOSFET P-CH 20V 1.3A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 750mA, 4.5V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 5 V
Description: MOSFET P-CH 20V 1.3A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 750mA, 4.5V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 5 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.14 EUR |
| 9000+ | 0.12 EUR |
| NTR1P02LT1G |
|
Hersteller: ON Semiconductor
Trans MOSFET P-CH 20V 1.3A 3-Pin SOT-23 T/R
Trans MOSFET P-CH 20V 1.3A 3-Pin SOT-23 T/R
auf Bestellung 5752 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 991+ | 0.18 EUR |
| 1047+ | 0.17 EUR |
| 1266+ | 0.13 EUR |
| 3000+ | 0.1 EUR |
| NTR1P02LT1G |
|
Hersteller: ON Semiconductor
Trans MOSFET P-CH 20V 1.3A 3-Pin SOT-23 T/R
Trans MOSFET P-CH 20V 1.3A 3-Pin SOT-23 T/R
auf Bestellung 5752 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 318+ | 0.56 EUR |
| 516+ | 0.33 EUR |
| 522+ | 0.32 EUR |
| 991+ | 0.15 EUR |
| 1047+ | 0.14 EUR |
| 1266+ | 0.11 EUR |
| 3000+ | 0.084 EUR |
| NTR1P02LT1G |
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Hersteller: onsemi
Description: MOSFET P-CH 20V 1.3A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 750mA, 4.5V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 5 V
Description: MOSFET P-CH 20V 1.3A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 750mA, 4.5V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 5 V
auf Bestellung 10671 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 26+ | 0.82 EUR |
| 38+ | 0.56 EUR |
| 100+ | 0.29 EUR |
| 500+ | 0.23 EUR |
| 1000+ | 0.17 EUR |
| NTR1P02LT1G |
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Hersteller: onsemi
MOSFETs -20V -1.3A P-Channel
MOSFETs -20V -1.3A P-Channel
auf Bestellung 2611 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 0.92 EUR |
| 10+ | 0.63 EUR |
| 100+ | 0.39 EUR |
| 500+ | 0.25 EUR |
| 1000+ | 0.21 EUR |
| 3000+ | 0.14 EUR |
| 6000+ | 0.13 EUR |
| NTR1P02LT1G |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.3A; 0.4W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.3A
Power dissipation: 0.4W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.22Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 3.1nC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.3A; 0.4W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.3A
Power dissipation: 0.4W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.22Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 3.1nC
auf Bestellung 3340 Stücke:
Lieferzeit 14-21 Tag (e)
| NTR1P02LT1G |
|
Hersteller: ON-Semiconductor
Transistor P-Channel MOSFET; 20V; 12V; 350mOhm; 1,3A; 400mW; -55°C ~ 150°C; NTR1P02LT3G (10000/reel) NTR1P02LT1G TNTR1P02l
Anzahl je Verpackung: 100 Stücke
Transistor P-Channel MOSFET; 20V; 12V; 350mOhm; 1,3A; 400mW; -55°C ~ 150°C; NTR1P02LT3G (10000/reel) NTR1P02LT1G TNTR1P02l
Anzahl je Verpackung: 100 Stücke
auf Bestellung 1380 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 200+ | 0.3 EUR |