Technische Details NTR1P02LT1G ON Semiconductor
Description: MOSFET P-CH 20V 1.3A SOT23-3, Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 5 V, Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Part Status: Active, Supplier Device Package: SOT-23-3 (TO-236), Vgs(th) (Max) @ Id: 1.25V @ 250µA, Power Dissipation (Max): 400mW (Ta), Rds On (Max) @ Id, Vgs: 220mOhm @ 750mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote NTR1P02LT1G nach Preis ab 0.083 EUR bis 0.82 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||
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NTR1P02LT1G | ON Semiconductor |
 Trans MOSFET P-CH 20V 1.3A 3-Pin SOT-23 T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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NTR1P02LT1G | ON Semiconductor |
Trans MOSFET P-CH 20V 1.3A 3-Pin SOT-23 T/R |
auf Bestellung 60000 Stücke: Lieferzeit 14-21 Tag (e) |
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NTR1P02LT1G | onsemi |
Description: MOSFET P-CH 20V 1.3A SOT23-3 Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 5 V Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 1.25V @ 250µA Power Dissipation (Max): 400mW (Ta) Rds On (Max) @ Id, Vgs: 220mOhm @ 750mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTR1P02LT1G | ON Semiconductor |
Trans MOSFET P-CH 20V 1.3A 3-Pin SOT-23 T/R |
auf Bestellung 5752 Stücke: Lieferzeit 14-21 Tag (e) |
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NTR1P02LT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -1.3A; 0.4W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.3A Power dissipation: 0.4W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 0.22Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 3.1nC |
auf Bestellung 3340 Stücke: Lieferzeit 14-21 Tag (e) |
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NTR1P02LT1G | ON Semiconductor |
Trans MOSFET P-CH 20V 1.3A 3-Pin SOT-23 T/R |
auf Bestellung 5752 Stücke: Lieferzeit 14-21 Tag (e) |
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NTR1P02LT1G | onsemi |
MOSFETs -20V -1.3A P-Channel |
auf Bestellung 98837 Stücke: Lieferzeit 10-14 Tag (e) |
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NTR1P02LT1G | onsemi |
Description: MOSFET P-CH 20V 1.3A SOT23-3 Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 5 V Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 1.25V @ 250µA Power Dissipation (Max): 400mW (Ta) Rds On (Max) @ Id, Vgs: 220mOhm @ 750mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
auf Bestellung 10671 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTR1P02LT1G | ON-Semiconductor |
Transistor P-Channel MOSFET; 20V; 12V; 350mOhm; 1,3A; 400mW; -55°C ~ 150°C; NTR1P02LT3G (10000/reel) NTR1P02LT1G TNTR1P02l Anzahl je Verpackung: 100 Stücke |
auf Bestellung 1380 Stücke: Lieferzeit 7-14 Tag (e) |
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| NTR1P02LT1G |
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Hersteller: ON Semiconductor
Trans MOSFET P-CH 20V 1.3A 3-Pin SOT-23 T/R
Trans MOSFET P-CH 20V 1.3A 3-Pin SOT-23 T/R
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.1 EUR |
| NTR1P02LT1G |
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Hersteller: ON Semiconductor
Trans MOSFET P-CH 20V 1.3A 3-Pin SOT-23 T/R
Trans MOSFET P-CH 20V 1.3A 3-Pin SOT-23 T/R
auf Bestellung 60000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.1 EUR |
| 6000+ | 0.1 EUR |
| 9000+ | 0.098 EUR |
| 12000+ | 0.094 EUR |
| 27000+ | 0.09 EUR |
| NTR1P02LT1G |
|
Hersteller: onsemi
Description: MOSFET P-CH 20V 1.3A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 5 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Power Dissipation (Max): 400mW (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 750mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 20V 1.3A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 5 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Power Dissipation (Max): 400mW (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 750mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.14 EUR |
| 9000+ | 0.12 EUR |
| NTR1P02LT1G |
|
Hersteller: ON Semiconductor
Trans MOSFET P-CH 20V 1.3A 3-Pin SOT-23 T/R
Trans MOSFET P-CH 20V 1.3A 3-Pin SOT-23 T/R
auf Bestellung 5752 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 991+ | 0.18 EUR |
| 1047+ | 0.17 EUR |
| 1050+ | 0.15 EUR |
| 1266+ | 0.13 EUR |
| 3000+ | 0.098 EUR |
| NTR1P02LT1G |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.3A; 0.4W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.3A
Power dissipation: 0.4W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.22Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 3.1nC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.3A; 0.4W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.3A
Power dissipation: 0.4W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.22Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 3.1nC
auf Bestellung 3340 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 186+ | 0.46 EUR |
| 291+ | 0.3 EUR |
| 334+ | 0.25 EUR |
| 447+ | 0.19 EUR |
| 589+ | 0.14 EUR |
| 695+ | 0.12 EUR |
| 1000+ | 0.12 EUR |
| 3000+ | 0.1 EUR |
| NTR1P02LT1G |
|
Hersteller: ON Semiconductor
Trans MOSFET P-CH 20V 1.3A 3-Pin SOT-23 T/R
Trans MOSFET P-CH 20V 1.3A 3-Pin SOT-23 T/R
auf Bestellung 5752 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 318+ | 0.55 EUR |
| 516+ | 0.32 EUR |
| 522+ | 0.31 EUR |
| 991+ | 0.15 EUR |
| 1047+ | 0.14 EUR |
| 1050+ | 0.13 EUR |
| 1266+ | 0.11 EUR |
| 3000+ | 0.083 EUR |
| NTR1P02LT1G |
|
Hersteller: onsemi
MOSFETs -20V -1.3A P-Channel
MOSFETs -20V -1.3A P-Channel
auf Bestellung 98837 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 0.7 EUR |
| 10+ | 0.43 EUR |
| 100+ | 0.39 EUR |
| 500+ | 0.25 EUR |
| 1000+ | 0.21 EUR |
| 3000+ | 0.19 EUR |
| 6000+ | 0.17 EUR |
| NTR1P02LT1G |
|
Hersteller: onsemi
Description: MOSFET P-CH 20V 1.3A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 5 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Power Dissipation (Max): 400mW (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 750mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 20V 1.3A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 5 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Power Dissipation (Max): 400mW (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 750mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 10671 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 26+ | 0.82 EUR |
| 38+ | 0.56 EUR |
| 100+ | 0.29 EUR |
| 500+ | 0.23 EUR |
| 1000+ | 0.17 EUR |
| NTR1P02LT1G |
|
Hersteller: ON-Semiconductor
Transistor P-Channel MOSFET; 20V; 12V; 350mOhm; 1,3A; 400mW; -55°C ~ 150°C; NTR1P02LT3G (10000/reel) NTR1P02LT1G TNTR1P02l
Anzahl je Verpackung: 100 Stücke
Transistor P-Channel MOSFET; 20V; 12V; 350mOhm; 1,3A; 400mW; -55°C ~ 150°C; NTR1P02LT3G (10000/reel) NTR1P02LT1G TNTR1P02l
Anzahl je Verpackung: 100 Stücke
auf Bestellung 1380 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 200+ | 0.29 EUR |