NTR3A052PZT1G onsemi

Description: MOSFET P-CH 20V 3.6A SOT23, Input Capacitance (Ciss) (Max) @ Vds: 1243 pF @ 4 V, Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Supplier Device Package: SOT-23-3 (TO-236), Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 860mW (Ta), Rds On (Max) @ Id, Vgs: 47mOhm @ 3.5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).