NTR3C21NZT3G ON Semiconductor
auf Bestellung 6476 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 2275+ | 0.24 EUR |
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Technische Details NTR3C21NZT3G ON Semiconductor
Description: MOSFET N-CH 20V 3.6A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta), Rds On (Max) @ Id, Vgs: 24mOhm @ 5A, 4.5V, Power Dissipation (Max): 470mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1540 pF @ 16 V.
Weitere Produktangebote NTR3C21NZT3G nach Preis ab 0.18 EUR bis 1.04 EUR
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NTR3C21NZT3G | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH 20V 3.6A 3-Pin SOT-23 T/R |
auf Bestellung 9700 Stücke: Lieferzeit 14-21 Tag (e) |
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NTR3C21NZT3G | Hersteller : onsemi |
MOSFETs 20 V SANYO T6 NCH IN |
auf Bestellung 8088 Stücke: Lieferzeit 10-14 Tag (e) |
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NTR3C21NZT3G | Hersteller : onsemi |
Description: MOSFET N-CH 20V 3.6A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 24mOhm @ 5A, 4.5V Power Dissipation (Max): 470mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1540 pF @ 16 V |
auf Bestellung 4066 Stücke: Lieferzeit 10-14 Tag (e) |
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NTR3C21NZT3G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 20V 3.6A 3-Pin SOT-23 T/R |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTR3C21NZT3G | Hersteller : ONSEMI |
Description: ONSEMI - NTR3C21NZT3G - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 9700 Stücke: Lieferzeit 14-21 Tag (e) |
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NTR3C21NZT3G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 20V 3.6A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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NTR3C21NZT3G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 20V 3.6A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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NTR3C21NZT3G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 20V 3.6A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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NTR3C21NZT3G | Hersteller : onsemi |
Description: MOSFET N-CH 20V 3.6A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 24mOhm @ 5A, 4.5V Power Dissipation (Max): 470mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1540 pF @ 16 V |
Produkt ist nicht verfügbar |