NTR4101PT1G
Produktcode: 41668
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Verschiedene Bauteile > Verschiedene Bauteile 2
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Weitere Produktangebote NTR4101PT1G nach Preis ab 0.09 EUR bis 0.67 EUR
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NTR4101PT1G | Hersteller : onsemi |
Description: MOSFET P-CH 20V 1.8A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 1.6A, 4.5V Power Dissipation (Max): 420mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 10 V |
auf Bestellung 132000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTR4101PT1G | Hersteller : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -1.7A; 0.21W; SOT23 Type of transistor: P-MOSFET Kind of package: reel; tape Drain-source voltage: -20V Drain current: -1.7A Gate charge: 7.5nC On-state resistance: 0.21Ω Power dissipation: 0.21W Gate-source voltage: ±8V Polarisation: unipolar Case: SOT23 Kind of channel: enhancement Mounting: SMD |
auf Bestellung 9165 Stücke: Lieferzeit 14-21 Tag (e) |
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NTR4101PT1G | Hersteller : onsemi |
MOSFETs -20V -3.2A P-Channel |
auf Bestellung 354167 Stücke: Lieferzeit 10-14 Tag (e) |
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NTR4101PT1G | Hersteller : onsemi |
Description: MOSFET P-CH 20V 1.8A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 1.6A, 4.5V Power Dissipation (Max): 420mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 10 V |
auf Bestellung 132570 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTR4101PT1G | Hersteller : ON-Semiconductor |
Transistor P-Channel MOSFET; 20V; 8V; 210mOhm; 2,4A; 730mW; -55°C ~ 150°C; NTR4101PT1G TNTR4101p Anzahl je Verpackung: 100 Stücke |
auf Bestellung 300 Stücke: Lieferzeit 7-14 Tag (e) |
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