NTR4170NT1G onsemi
Hersteller: onsemiDescription: MOSFET N-CH 30V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.2A, 10V
Power Dissipation (Max): 480mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.76 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 432 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.26 EUR |
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Technische Details NTR4170NT1G onsemi
Description: MOSFET N-CH 30V SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta), Rds On (Max) @ Id, Vgs: 55mOhm @ 3.2A, 10V, Power Dissipation (Max): 480mW (Ta), Vgs(th) (Max) @ Id: 1.4V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 4.76 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 432 pF @ 15 V.
Weitere Produktangebote NTR4170NT1G nach Preis ab 0.24 EUR bis 0.97 EUR
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NTR4170NT1G | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 1.7A; 0.48W; SOT23 Mounting: SMD Case: SOT23 Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±12V Drain-source voltage: 30V Drain current: 1.7A On-state resistance: 55mΩ Type of transistor: N-MOSFET Power dissipation: 0.48W Kind of package: reel; tape Anzahl je Verpackung: 5 Stücke |
auf Bestellung 220 Stücke: Lieferzeit 7-14 Tag (e) |
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NTR4170NT1G | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 1.7A; 0.48W; SOT23 Mounting: SMD Case: SOT23 Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±12V Drain-source voltage: 30V Drain current: 1.7A On-state resistance: 55mΩ Type of transistor: N-MOSFET Power dissipation: 0.48W Kind of package: reel; tape |
auf Bestellung 220 Stücke: Lieferzeit 14-21 Tag (e) |
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NTR4170NT1G | Hersteller : onsemi |
Description: MOSFET N-CH 30V SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Rds On (Max) @ Id, Vgs: 55mOhm @ 3.2A, 10V Power Dissipation (Max): 480mW (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.76 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 432 pF @ 15 V |
auf Bestellung 4073 Stücke: Lieferzeit 21-28 Tag (e) |
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