NTR4171PT1G onsemi
Hersteller: onsemi
Description: MOSFET P-CH 30V 2.2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2.2A, 10V
Power Dissipation (Max): 480mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 15 V
Description: MOSFET P-CH 30V 2.2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2.2A, 10V
Power Dissipation (Max): 480mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 15 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.24 EUR |
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Produktbewertung abgeben
Technische Details NTR4171PT1G onsemi
Description: MOSFET P-CH 30V 2.2A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta), Rds On (Max) @ Id, Vgs: 75mOhm @ 2.2A, 10V, Power Dissipation (Max): 480mW (Ta), Vgs(th) (Max) @ Id: 1.4V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 15 V.
Weitere Produktangebote NTR4171PT1G nach Preis ab 0.22 EUR bis 1.02 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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NTR4171PT1G | Hersteller : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 1.25W; SOT23 Mounting: SMD Case: SOT23 Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±12V Gate charge: 7.4nC Drain-source voltage: -30V Drain current: -1.5A On-state resistance: 0.15Ω Type of transistor: P-MOSFET Power dissipation: 1.25W Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3027 Stücke: Lieferzeit 7-14 Tag (e) |
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NTR4171PT1G | Hersteller : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 1.25W; SOT23 Mounting: SMD Case: SOT23 Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±12V Gate charge: 7.4nC Drain-source voltage: -30V Drain current: -1.5A On-state resistance: 0.15Ω Type of transistor: P-MOSFET Power dissipation: 1.25W Kind of package: reel; tape |
auf Bestellung 3027 Stücke: Lieferzeit 14-21 Tag (e) |
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NTR4171PT1G | Hersteller : onsemi |
Description: MOSFET P-CH 30V 2.2A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Rds On (Max) @ Id, Vgs: 75mOhm @ 2.2A, 10V Power Dissipation (Max): 480mW (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 15 V |
auf Bestellung 13129 Stücke: Lieferzeit 10-14 Tag (e) |
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NTR4171PT1G | Hersteller : onsemi | MOSFET PFET SOT23 30V TR 0.075R |
auf Bestellung 150301 Stücke: Lieferzeit 14-28 Tag (e) |
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NTR4171PT1G | Hersteller : ONSEMI |
Description: ONSEMI - NTR4171PT1G - Leistungs-MOSFET, p-Kanal, 30 V, 3.5 A, 0.05 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 3.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: -888 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.15V euEccn: NLR Verlustleistung: 1.25W Anzahl der Pins: 3Pin(s) Produktpalette: -999 productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.05ohm |
auf Bestellung 10074 Stücke: Lieferzeit 14-21 Tag (e) |
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NTR4171PT1G | Hersteller : ONSEMI |
Description: ONSEMI - NTR4171PT1G - Leistungs-MOSFET, p-Kanal, 30 V, 3.5 A, 0.05 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 3.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: -888 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.15V euEccn: NLR Verlustleistung: 1.25W Anzahl der Pins: 3Pin(s) Produktpalette: -999 productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.05ohm |
auf Bestellung 10074 Stücke: Lieferzeit 14-21 Tag (e) |
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NTR4171PT1G | Hersteller : ON Semiconductor | Trans MOSFET P-CH 30V 2.2A 3-Pin SOT-23 T/R |
auf Bestellung 27000 Stücke: Lieferzeit 14-21 Tag (e) |
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NTR4171PT1G | Hersteller : ON Semiconductor | Trans MOSFET P-CH 30V 2.2A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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NTR4171PT1G | Hersteller : ON Semiconductor | Trans MOSFET P-CH 30V 2.2A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |