NTR5198NLT1G ON Semiconductor
| Anzahl | Preis |
|---|---|
| 3000+ | 0.12 EUR |
| 6000+ | 0.11 EUR |
| 12000+ | 0.1 EUR |
| 27000+ | 0.099 EUR |
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Technische Details NTR5198NLT1G ON Semiconductor
Description: MOSFET N-CH 60V 1.7A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta), Rds On (Max) @ Id, Vgs: 155mOhm @ 1A, 10V, Power Dissipation (Max): 900mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 182 pF @ 25 V.
Weitere Produktangebote NTR5198NLT1G nach Preis ab 0.087 EUR bis 0.67 EUR
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NTR5198NLT1G | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH 60V 2.2A 3-Pin SOT-23 T/R |
auf Bestellung 14690 Stücke: Lieferzeit 14-21 Tag (e) |
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NTR5198NLT1G | Hersteller : onsemi |
Description: MOSFET N-CH 60V 1.7A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Rds On (Max) @ Id, Vgs: 155mOhm @ 1A, 10V Power Dissipation (Max): 900mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 182 pF @ 25 V |
auf Bestellung 48000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTR5198NLT1G | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 1.6A; 0.6W; SOT23 Power dissipation: 0.6W Kind of package: reel; tape Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar On-state resistance: 155mΩ Drain current: 1.6A Gate-source voltage: ±20V Drain-source voltage: 60V Kind of channel: enhancement Case: SOT23 |
auf Bestellung 5580 Stücke: Lieferzeit 14-21 Tag (e) |
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NTR5198NLT1G | Hersteller : onsemi |
MOSFETs Pwr MOSFET 60V 2.2A 155mOhm SGL N-CH |
auf Bestellung 30191 Stücke: Lieferzeit 10-14 Tag (e) |
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NTR5198NLT1G | Hersteller : onsemi |
Description: MOSFET N-CH 60V 1.7A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Rds On (Max) @ Id, Vgs: 155mOhm @ 1A, 10V Power Dissipation (Max): 900mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 182 pF @ 25 V |
auf Bestellung 51512 Stücke: Lieferzeit 10-14 Tag (e) |
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NTR5198NLT1G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 2.2A 3-Pin SOT-23 T/R |
auf Bestellung 8 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTR5198NLT1G | Hersteller : ONSEMI |
Description: ONSEMI - NTR5198NLT1G - NFET SOT23 60V 2.2A 205M 08AK6614 tariffCode: 85412100 productTraceability: Yes-Date/Lot Code rohsCompliant: TBA euEccn: NLR isCanonical: Y hazardous: false rohsPhthalatesCompliant: TBA directShipCharge: 25 usEccn: EAR99 |
auf Bestellung 1484 Stücke: Lieferzeit 14-21 Tag (e) |