NTR5198NLT1G onsemi
Hersteller: onsemiDescription: MOSFET N-CH 60V 1.7A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 1A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 182 pF @ 25 V
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.11 EUR |
| 21000+ | 0.1 EUR |
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Technische Details NTR5198NLT1G onsemi
Description: MOSFET N-CH 60V 1.7A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta), Rds On (Max) @ Id, Vgs: 155mOhm @ 1A, 10V, Power Dissipation (Max): 900mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 182 pF @ 25 V.
Weitere Produktangebote NTR5198NLT1G nach Preis ab 0.068 EUR bis 0.63 EUR
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NTR5198NLT1G | Hersteller : ON Semiconductor |
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auf Bestellung 96000 Stücke: Lieferzeit 14-21 Tag (e) |
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NTR5198NLT1G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 2.2A 3-Pin SOT-23 T/R |
auf Bestellung 16890 Stücke: Lieferzeit 14-21 Tag (e) |
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NTR5198NLT1G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 2.2A 3-Pin SOT-23 T/R |
auf Bestellung 8055 Stücke: Lieferzeit 14-21 Tag (e) |
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NTR5198NLT1G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 2.2A 3-Pin SOT-23 T/R |
auf Bestellung 8055 Stücke: Lieferzeit 14-21 Tag (e) |
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NTR5198NLT1G | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 1.6A; 0.6W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 1.6A Power dissipation: 0.6W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 155mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2834 Stücke: Lieferzeit 7-14 Tag (e) |
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NTR5198NLT1G | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 1.6A; 0.6W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 1.6A Power dissipation: 0.6W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 155mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2834 Stücke: Lieferzeit 14-21 Tag (e) |
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NTR5198NLT1G | Hersteller : onsemi |
MOSFETs Pwr MOSFET 60V 2.2A 155mOhm SGL N-CH |
auf Bestellung 14016 Stücke: Lieferzeit 10-14 Tag (e) |
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NTR5198NLT1G | Hersteller : onsemi |
Description: MOSFET N-CH 60V 1.7A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Rds On (Max) @ Id, Vgs: 155mOhm @ 1A, 10V Power Dissipation (Max): 900mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 182 pF @ 25 V |
auf Bestellung 45443 Stücke: Lieferzeit 10-14 Tag (e) |
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NTR5198NLT1G | Hersteller : ONSEMI |
Description: ONSEMI - NTR5198NLT1G - Leistungs-MOSFET, n-Kanal, 60 V, 2.2 A, 0.107 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 2.2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 1.5W Anzahl der Pins: 3Pin(s) productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.107ohm SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 111579 Stücke: Lieferzeit 14-21 Tag (e) |
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NTR5198NLT1G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 2.2A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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NTR5198NLT1G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 2.2A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |