NTRV4101PT1G onsemi
Hersteller: onsemi
Description: MOSFET P-CH 20V 1.8A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 1.6A, 4.5V
Power Dissipation (Max): 420mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 10 V
Qualification: AEC-Q101
| Anzahl | Preis |
|---|---|
| 3000+ | 0.36 EUR |
| 6000+ | 0.33 EUR |
| 9000+ | 0.31 EUR |
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Technische Details NTRV4101PT1G onsemi
Description: MOSFET P-CH 20V 1.8A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta), Rds On (Max) @ Id, Vgs: 85mOhm @ 1.6A, 4.5V, Power Dissipation (Max): 420mW (Ta), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 10 V, Qualification: AEC-Q101.
Weitere Produktangebote NTRV4101PT1G nach Preis ab 0.34 EUR bis 1.21 EUR
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NTRV4101PT1G | onsemi |
MOSFETs PFET 20V 3.2A 85MO |
auf Bestellung 153074 Stücke: Lieferzeit 10-14 Tag (e) |
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NTRV4101PT1G | onsemi |
Description: MOSFET P-CH 20V 1.8A SOT23-3 Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 1.2V @ 250µA Power Dissipation (Max): 420mW (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 1.6A, 4.5V Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Qualification: AEC-Q101 Grade: Automotive |
auf Bestellung 11565 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTRV4101PT1G |
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Hersteller: onsemi
MOSFETs PFET 20V 3.2A 85MO
MOSFETs PFET 20V 3.2A 85MO
auf Bestellung 153074 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 0.95 EUR |
| 10+ | 0.67 EUR |
| 100+ | 0.49 EUR |
| 500+ | 0.42 EUR |
| 1000+ | 0.39 EUR |
| 3000+ | 0.35 EUR |
| 6000+ | 0.34 EUR |
| NTRV4101PT1G |
|
Hersteller: onsemi
Description: MOSFET P-CH 20V 1.8A SOT23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 420mW (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 1.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET P-CH 20V 1.8A SOT23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 420mW (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 1.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 11565 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 1.21 EUR |
| 22+ | 0.82 EUR |
| 100+ | 0.57 EUR |
| 500+ | 0.46 EUR |
| 1000+ | 0.38 EUR |