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NTRV4101PT1G

NTRV4101PT1G onsemi

ntr4101p-d.pdf Hersteller: onsemi
Description: MOSFET P-CH 20V 1.8A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 1.6A, 4.5V
Power Dissipation (Max): 420mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 10 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.42 EUR
6000+0.39 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NTRV4101PT1G onsemi

Description: MOSFET P-CH 20V 1.8A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta), Rds On (Max) @ Id, Vgs: 85mOhm @ 1.6A, 4.5V, Power Dissipation (Max): 420mW (Ta), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 10 V.

Weitere Produktangebote NTRV4101PT1G nach Preis ab 0.34 EUR bis 1.09 EUR

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NTRV4101PT1G NTRV4101PT1G Hersteller : onsemi NTR4101P_D-1814409.pdf MOSFETs PFET 20V 3.2A 85MO
auf Bestellung 153074 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+0.95 EUR
10+0.67 EUR
100+0.49 EUR
500+0.42 EUR
1000+0.39 EUR
3000+0.35 EUR
6000+0.34 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
NTRV4101PT1G NTRV4101PT1G Hersteller : onsemi ntr4101p-d.pdf Description: MOSFET P-CH 20V 1.8A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 1.6A, 4.5V
Power Dissipation (Max): 420mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 10 V
auf Bestellung 6843 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.09 EUR
19+0.96 EUR
100+0.74 EUR
500+0.58 EUR
1000+0.47 EUR
Mindestbestellmenge: 17
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NTRV4101PT1G NTRV4101PT1G Hersteller : ON Semiconductor ntr4101p-d.pdf Trans MOSFET P-CH 20V 3.2A Automotive 3-Pin SOT-23 T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
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NTRV4101PT1G Hersteller : ONSEMI ntr4101p-d.pdf NTRV4101PT1G SMD P channel transistors
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