auf Bestellung 630 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 9.79 EUR |
| 10+ | 6.97 EUR |
| 100+ | 6.04 EUR |
| 500+ | 5.9 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NTT2023N065M3S onsemi
Description: ELITESIC, 23 MOHM, 650 V, M3S,T2, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), Variant, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 72A (Tc), Rds On (Max) @ Id, Vgs: 32.6mOhm @ 21A, 18V, Power Dissipation (Max): 288W (Tc), Vgs(th) (Max) @ Id: 4V @ 10mA, Supplier Device Package: T2PAK, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +22V, -8V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 400 V.
Weitere Produktangebote NTT2023N065M3S nach Preis ab 5.45 EUR bis 9.59 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| NTT2023N065M3S | Hersteller : onsemi |
 Description: ELITESIC, 23 MOHM, 650 V, M3S,T2Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), Variant Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Rds On (Max) @ Id, Vgs: 32.6mOhm @ 21A, 18V Power Dissipation (Max): 288W (Tc) Vgs(th) (Max) @ Id: 4V @ 10mA Supplier Device Package: T2PAK Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 400 V |
auf Bestellung 3200 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||
| NTT2023N065M3S | Hersteller : onsemi |
Description: ELITESIC, 23 MOHM, 650 V, M3S,T2 Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), Variant Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Rds On (Max) @ Id, Vgs: 32.6mOhm @ 21A, 18V Power Dissipation (Max): 288W (Tc) Vgs(th) (Max) @ Id: 4V @ 10mA Supplier Device Package: T2PAK Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 400 V |
auf Bestellung 3920 Stücke: Lieferzeit 10-14 Tag (e) |
|