NTTD4401FR2G onsemi
Hersteller: onsemiDescription: MOSFET P-CH 20V 2.4A MICRO8
Packaging: Bulk
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.3A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 780mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-MSOP
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 16 V
auf Bestellung 12875 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1268+ | 0.58 EUR |
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Technische Details NTTD4401FR2G onsemi
Description: MOSFET P-CH 20V 2.4A MICRO8, Packaging: Tape & Reel (TR), Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta), Rds On (Max) @ Id, Vgs: 90mOhm @ 3.3A, 4.5V, FET Feature: Schottky Diode (Isolated), Power Dissipation (Max): 780mW (Ta), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: 8-MSOP, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 16 V.
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Verfügbarkeit |
Preis ohne MwSt |
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auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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| NTTD4401FR2G | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 20V 3.3A 8-Pin Micro T/R |
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NTTD4401FR2G | Hersteller : onsemi |
Description: MOSFET P-CH 20V 2.4A MICRO8 Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 3.3A, 4.5V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 780mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 8-MSOP Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 16 V |
Produkt ist nicht verfügbar |