auf Bestellung 2797 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
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1+ | 5.05 EUR |
10+ | 4.26 EUR |
25+ | 4.22 EUR |
100+ | 3.45 EUR |
250+ | 3.41 EUR |
500+ | 3.06 EUR |
1000+ | 2.62 EUR |
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Technische Details NTTFD021N08C onsemi
Description: MOSFET 2N-CH 80V 6A/24A 12WQFN, Packaging: Tape & Reel (TR), Package / Case: 12-PowerWQFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.7W (Ta), 26W (Tc), Drain to Source Voltage (Vdss): 80V, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 24A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 572pF @ 40V, Rds On (Max) @ Id, Vgs: 21mOhm @ 7.8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 44µA, Supplier Device Package: 12-WQFN (3.3x3.3), Part Status: Active.
Weitere Produktangebote NTTFD021N08C nach Preis ab 2.32 EUR bis 4.96 EUR
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NTTFD021N08C | Hersteller : onsemi |
Description: MOSFET 2N-CH 80V 6A/24A 12WQFN Packaging: Tape & Reel (TR) Package / Case: 12-PowerWQFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.7W (Ta), 26W (Tc) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 24A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 572pF @ 40V Rds On (Max) @ Id, Vgs: 21mOhm @ 7.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V Vgs(th) (Max) @ Id: 4V @ 44µA Supplier Device Package: 12-WQFN (3.3x3.3) Part Status: Active |
auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTTFD021N08C | Hersteller : onsemi |
Description: MOSFET 2N-CH 80V 6A/24A 12WQFN Packaging: Cut Tape (CT) Package / Case: 12-PowerWQFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.7W (Ta), 26W (Tc) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 24A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 572pF @ 40V Rds On (Max) @ Id, Vgs: 21mOhm @ 7.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V Vgs(th) (Max) @ Id: 4V @ 44µA Supplier Device Package: 12-WQFN (3.3x3.3) Part Status: Active |
auf Bestellung 20890 Stücke: Lieferzeit 10-14 Tag (e) |
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NTTFD021N08C | Hersteller : ON Semiconductor | 80V DUAL N-CH MOSFET |
Produkt ist nicht verfügbar |