| Anzahl | Preis |
|---|---|
| 1+ | 7.04 EUR |
| 10+ | 4.63 EUR |
| 100+ | 3.29 EUR |
| 500+ | 2.82 EUR |
| 1000+ | 2.64 EUR |
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Technische Details NTTFD021N08C onsemi
Description: MOSFET 2N-CH 80V 6A/24A 12WQFN, Mounting Type: Surface Mount, Package / Case: 12-PowerWQFN, Packaging: Tape & Reel (TR), Part Status: Active, Supplier Device Package: 12-WQFN (3.3x3.3), Vgs(th) (Max) @ Id: 4V @ 44µA, Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V, Rds On (Max) @ Id, Vgs: 21mOhm @ 7.8A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 572pF @ 40V, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 24A (Tc), Drain to Source Voltage (Vdss): 80V, Power - Max: 1.7W (Ta), 26W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual).
Weitere Produktangebote NTTFD021N08C nach Preis ab 2.32 EUR bis 4.96 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| NTTFD021N08C | onsemi |
 Description: MOSFET 2N-CH 80V 6A/24A 12WQFNMounting Type: Surface Mount Package / Case: 12-PowerWQFN Packaging: Tape & Reel (TR) Part Status: Active Supplier Device Package: 12-WQFN (3.3x3.3) Vgs(th) (Max) @ Id: 4V @ 44µA Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V Rds On (Max) @ Id, Vgs: 21mOhm @ 7.8A, 10V Input Capacitance (Ciss) (Max) @ Vds: 572pF @ 40V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 24A (Tc) Drain to Source Voltage (Vdss): 80V Power - Max: 1.7W (Ta), 26W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) |
auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTTFD021N08C | onsemi |
Description: MOSFET 2N-CH 80V 6A/24A 12WQFN Part Status: Active Supplier Device Package: 12-WQFN (3.3x3.3) Vgs(th) (Max) @ Id: 4V @ 44µA Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V Rds On (Max) @ Id, Vgs: 21mOhm @ 7.8A, 10V Input Capacitance (Ciss) (Max) @ Vds: 572pF @ 40V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 24A (Tc) Drain to Source Voltage (Vdss): 80V Power - Max: 1.7W (Ta), 26W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 12-PowerWQFN Packaging: Cut Tape (CT) |
auf Bestellung 20890 Stücke: Lieferzeit 10-14 Tag (e) |
|
| NTTFD021N08C |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 80V 6A/24A 12WQFN
Mounting Type: Surface Mount
Package / Case: 12-PowerWQFN
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 12-WQFN (3.3x3.3)
Vgs(th) (Max) @ Id: 4V @ 44µA
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 7.8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 572pF @ 40V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 24A (Tc)
Drain to Source Voltage (Vdss): 80V
Power - Max: 1.7W (Ta), 26W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Description: MOSFET 2N-CH 80V 6A/24A 12WQFN
Mounting Type: Surface Mount
Package / Case: 12-PowerWQFN
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 12-WQFN (3.3x3.3)
Vgs(th) (Max) @ Id: 4V @ 44µA
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 7.8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 572pF @ 40V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 24A (Tc)
Drain to Source Voltage (Vdss): 80V
Power - Max: 1.7W (Ta), 26W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 2.42 EUR |
| 6000+ | 2.32 EUR |
| NTTFD021N08C |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 80V 6A/24A 12WQFN
Part Status: Active
Supplier Device Package: 12-WQFN (3.3x3.3)
Vgs(th) (Max) @ Id: 4V @ 44µA
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 7.8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 572pF @ 40V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 24A (Tc)
Drain to Source Voltage (Vdss): 80V
Power - Max: 1.7W (Ta), 26W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 12-PowerWQFN
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 80V 6A/24A 12WQFN
Part Status: Active
Supplier Device Package: 12-WQFN (3.3x3.3)
Vgs(th) (Max) @ Id: 4V @ 44µA
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 7.8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 572pF @ 40V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 24A (Tc)
Drain to Source Voltage (Vdss): 80V
Power - Max: 1.7W (Ta), 26W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 12-PowerWQFN
Packaging: Cut Tape (CT)
auf Bestellung 20890 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 4.96 EUR |
| 10+ | 4.17 EUR |
| 100+ | 3.37 EUR |
| 500+ | 3 EUR |
| 1000+ | 2.57 EUR |