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NTTFD021N08C

NTTFD021N08C onsemi


NTTFD021N08C_D-2319209.pdf Hersteller: onsemi
MOSFET 80V DUAL N-CH MOSFET
auf Bestellung 2797 Stücke:

Lieferzeit 10-14 Tag (e)
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1+5.05 EUR
10+ 4.26 EUR
25+ 4.22 EUR
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250+ 3.41 EUR
500+ 3.06 EUR
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Technische Details NTTFD021N08C onsemi

Description: MOSFET 2N-CH 80V 6A/24A 12WQFN, Packaging: Tape & Reel (TR), Package / Case: 12-PowerWQFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.7W (Ta), 26W (Tc), Drain to Source Voltage (Vdss): 80V, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 24A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 572pF @ 40V, Rds On (Max) @ Id, Vgs: 21mOhm @ 7.8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 44µA, Supplier Device Package: 12-WQFN (3.3x3.3), Part Status: Active.

Weitere Produktangebote NTTFD021N08C nach Preis ab 2.32 EUR bis 4.96 EUR

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NTTFD021N08C Hersteller : onsemi nttfd021n08c-d.pdf Description: MOSFET 2N-CH 80V 6A/24A 12WQFN
Packaging: Tape & Reel (TR)
Package / Case: 12-PowerWQFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W (Ta), 26W (Tc)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 24A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 572pF @ 40V
Rds On (Max) @ Id, Vgs: 21mOhm @ 7.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 44µA
Supplier Device Package: 12-WQFN (3.3x3.3)
Part Status: Active
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+2.42 EUR
6000+ 2.32 EUR
Mindestbestellmenge: 3000
NTTFD021N08C Hersteller : onsemi nttfd021n08c-d.pdf Description: MOSFET 2N-CH 80V 6A/24A 12WQFN
Packaging: Cut Tape (CT)
Package / Case: 12-PowerWQFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W (Ta), 26W (Tc)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 24A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 572pF @ 40V
Rds On (Max) @ Id, Vgs: 21mOhm @ 7.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 44µA
Supplier Device Package: 12-WQFN (3.3x3.3)
Part Status: Active
auf Bestellung 20890 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.96 EUR
10+ 4.17 EUR
100+ 3.37 EUR
500+ 3 EUR
1000+ 2.57 EUR
Mindestbestellmenge: 4
NTTFD021N08C Hersteller : ON Semiconductor nttfd021n08c-d.pdf 80V DUAL N-CH MOSFET
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