NTTFD022N10C onsemi
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.16 EUR |
| 10+ | 4.33 EUR |
| 100+ | 3.50 EUR |
| 500+ | 3.12 EUR |
| 1000+ | 2.68 EUR |
| 3000+ | 2.50 EUR |
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Technische Details NTTFD022N10C onsemi
Description: MOSFET 2N-CH 100V 6A/24A 12WQFN, Packaging: Tape & Reel (TR), Package / Case: 12-PowerWQFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.7W (Ta), 26W (Tc), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 24A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 585pF @ 50V, Rds On (Max) @ Id, Vgs: 25mOhm @ 7.8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 44µA, Supplier Device Package: 12-WQFN (3.3x3.3).
Weitere Produktangebote NTTFD022N10C nach Preis ab 2.71 EUR bis 5.24 EUR
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| NTTFD022N10C | Hersteller : onsemi |
 Description: MOSFET 2N-CH 100V 6A/24A 12WQFNPackaging: Cut Tape (CT) Package / Case: 12-PowerWQFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.7W (Ta), 26W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 24A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 585pF @ 50V Rds On (Max) @ Id, Vgs: 25mOhm @ 7.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V Vgs(th) (Max) @ Id: 4V @ 44µA Supplier Device Package: 12-WQFN (3.3x3.3) |
auf Bestellung 5600 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTTFD022N10C | Hersteller : ON Semiconductor |
MOSFET, Power, 100V POWERTRENCH Power Clip Half Bridge Configuration |
Produkt ist nicht verfügbar |
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| NTTFD022N10C | Hersteller : ONSEMI |
NTTFD022N10C Multi channel transistors |
Produkt ist nicht verfügbar |
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| NTTFD022N10C | Hersteller : onsemi |
Description: MOSFET 2N-CH 100V 6A/24A 12WQFN Packaging: Tape & Reel (TR) Package / Case: 12-PowerWQFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.7W (Ta), 26W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 24A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 585pF @ 50V Rds On (Max) @ Id, Vgs: 25mOhm @ 7.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V Vgs(th) (Max) @ Id: 4V @ 44µA Supplier Device Package: 12-WQFN (3.3x3.3) |
Produkt ist nicht verfügbar |