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NTTFD2D8N03P1E

NTTFD2D8N03P1E onsemi

nttfd2d8n03p1e-d.pdf Hersteller: onsemi
Description: MOSFET 2N-CH 30V 16.1A 12WQFN
Packaging: Tape & Reel (TR)
Package / Case: 12-PowerWQFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.04W (Ta), 26W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16.1A (Ta), 80A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V, 1521pF @ 15V
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 18A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20.8nC @ 10V, 20.5nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 400µA
Supplier Device Package: 12-WQFN (3.3x3.3)
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.52 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NTTFD2D8N03P1E onsemi

Description: MOSFET 2N-CH 30V 16.1A 12WQFN, Packaging: Tape & Reel (TR), Package / Case: 12-PowerWQFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.04W (Ta), 26W (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 16.1A (Ta), 80A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V, 1521pF @ 15V, Rds On (Max) @ Id, Vgs: 2.5mOhm @ 18A, 10V, Gate Charge (Qg) (Max) @ Vgs: 20.8nC @ 10V, 20.5nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 400µA, Supplier Device Package: 12-WQFN (3.3x3.3), Part Status: Active.

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NTTFD2D8N03P1E NTTFD2D8N03P1E Hersteller : onsemi NTTFD2D8N03P1E_D-1841514.pdf MOSFETs FET 30V 28 MOHM PC33 DUAL SYMM
auf Bestellung 2932 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.77 EUR
10+2.73 EUR
100+1.95 EUR
500+1.61 EUR
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NTTFD2D8N03P1E NTTFD2D8N03P1E Hersteller : onsemi nttfd2d8n03p1e-d.pdf Description: MOSFET 2N-CH 30V 16.1A 12WQFN
Packaging: Cut Tape (CT)
Package / Case: 12-PowerWQFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.04W (Ta), 26W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16.1A (Ta), 80A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V, 1521pF @ 15V
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 18A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20.8nC @ 10V, 20.5nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 400µA
Supplier Device Package: 12-WQFN (3.3x3.3)
Part Status: Active
auf Bestellung 4344 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.85 EUR
10+2.79 EUR
100+2 EUR
500+1.71 EUR
1000+1.6 EUR
Mindestbestellmenge: 5
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NTTFD2D8N03P1E Hersteller : ONSEMI nttfd2d8n03p1e-d.pdf NTTFD2D8N03P1E Multi channel transistors
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