auf Bestellung 3218 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 3.54 EUR |
| 10+ | 2.92 EUR |
| 100+ | 2.34 EUR |
| 250+ | 2.16 EUR |
| 500+ | 1.95 EUR |
| 1000+ | 1.67 EUR |
| 3000+ | 1.6 EUR |
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Technische Details NTTFD2D8N03P1E onsemi
Description: MOSFET 2N-CH 30V 16.1A 12WQFN, Packaging: Tape & Reel (TR), Package / Case: 12-PowerWQFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.04W (Ta), 26W (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 16.1A (Ta), 80A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V, 1521pF @ 15V, Rds On (Max) @ Id, Vgs: 2.5mOhm @ 18A, 10V, Gate Charge (Qg) (Max) @ Vgs: 20.8nC @ 10V, 20.5nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 400µA, Supplier Device Package: 12-WQFN (3.3x3.3), Part Status: Active.
Weitere Produktangebote NTTFD2D8N03P1E
| Foto | Bezeichnung | Hersteller | Beschreibung |
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NTTFD2D8N03P1E | Hersteller : onsemi |
 Description: MOSFET 2N-CH 30V 16.1A 12WQFNPackaging: Tape & Reel (TR) Package / Case: 12-PowerWQFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.04W (Ta), 26W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16.1A (Ta), 80A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V, 1521pF @ 15V Rds On (Max) @ Id, Vgs: 2.5mOhm @ 18A, 10V Gate Charge (Qg) (Max) @ Vgs: 20.8nC @ 10V, 20.5nC @ 10V Vgs(th) (Max) @ Id: 3V @ 400µA Supplier Device Package: 12-WQFN (3.3x3.3) Part Status: Active |
Produkt ist nicht verfügbar |
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NTTFD2D8N03P1E | Hersteller : onsemi |
Description: MOSFET 2N-CH 30V 16.1A 12WQFN Packaging: Cut Tape (CT) Package / Case: 12-PowerWQFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.04W (Ta), 26W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16.1A (Ta), 80A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V, 1521pF @ 15V Rds On (Max) @ Id, Vgs: 2.5mOhm @ 18A, 10V Gate Charge (Qg) (Max) @ Vgs: 20.8nC @ 10V, 20.5nC @ 10V Vgs(th) (Max) @ Id: 3V @ 400µA Supplier Device Package: 12-WQFN (3.3x3.3) Part Status: Active |
Produkt ist nicht verfügbar |