auf Bestellung 992 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 3.03 EUR |
10+ | 2.52 EUR |
100+ | 2.2 EUR |
1000+ | 1.44 EUR |
3000+ | 1.36 EUR |
6000+ | 1.32 EUR |
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Technische Details NTTFD4D0N04HLTWG onsemi
Description: MOSFET, POWER, 40V POWERTRENCH P, Packaging: Tape & Reel (TR), Package / Case: 12-PowerWQFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.7W (Ta), 26W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 60A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 20V, Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, Vgs(th) (Max) @ Id: 2V @ 50µA, Supplier Device Package: 12-WQFN (3.3x3.3), Part Status: Active.
Weitere Produktangebote NTTFD4D0N04HLTWG nach Preis ab 2.6 EUR bis 5.03 EUR
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NTTFD4D0N04HLTWG | Hersteller : onsemi |
Description: MOSFET, POWER, 40V POWERTRENCH P Packaging: Cut Tape (CT) Package / Case: 12-PowerWQFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.7W (Ta), 26W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 60A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 20V Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Vgs(th) (Max) @ Id: 2V @ 50µA Supplier Device Package: 12-WQFN (3.3x3.3) Part Status: Active |
auf Bestellung 1857 Stücke: Lieferzeit 10-14 Tag (e) |
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NTTFD4D0N04HLTWG | Hersteller : onsemi |
Description: MOSFET, POWER, 40V POWERTRENCH P Packaging: Tape & Reel (TR) Package / Case: 12-PowerWQFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.7W (Ta), 26W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 60A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 20V Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Vgs(th) (Max) @ Id: 2V @ 50µA Supplier Device Package: 12-WQFN (3.3x3.3) Part Status: Active |
Produkt ist nicht verfügbar |